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Part Details for SIHD7N60ET1-GE3 by Vishay Intertechnologies
Overview of SIHD7N60ET1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for SIHD7N60ET1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78-SIHD7N60ET1-GE3
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Mouser Electronics | MOSFETs 600V 600mOhm@10V 7A N-Ch E-SRS RoHS: Compliant | 500 |
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$0.8370 / $1.9300 | Buy Now |
Part Details for SIHD7N60ET1-GE3
SIHD7N60ET1-GE3 CAD Models
SIHD7N60ET1-GE3 Part Data Attributes
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SIHD7N60ET1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHD7N60ET1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 43 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 609 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHD7N60ET1-GE3
This table gives cross-reference parts and alternative options found for SIHD7N60ET1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD7N60ET1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHD7N60ET4-GE3 | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | SIHD7N60ET1-GE3 vs SIHD7N60ET4-GE3 |
| TSM60NB600CPROG | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2 | Taiwan Semiconductor | SIHD7N60ET1-GE3 vs TSM60NB600CPROG |
| CDM7-700LR | Power Field-Effect Transistor, 7A I(D), 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | Central Semiconductor Corp | SIHD7N60ET1-GE3 vs CDM7-700LR |
| SIHD7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD7N60ET1-GE3 vs SIHD7N60E-GE3 |
| SPP07N60C3XK | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIHD7N60ET1-GE3 vs SPP07N60C3XK |
| CDM7-600LRTR13 | Power Field-Effect Transistor, 7A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2 | Central Semiconductor Corp | SIHD7N60ET1-GE3 vs CDM7-600LRTR13 |
| SIHU6N65E-GE3 | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Vishay Intertechnologies | SIHD7N60ET1-GE3 vs SIHU6N65E-GE3 |
| SIHU7N60E-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHD7N60ET1-GE3 vs SIHU7N60E-GE3 |
| TSM60NB600CHC5G | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Taiwan Semiconductor | SIHD7N60ET1-GE3 vs TSM60NB600CHC5G |
| R6007END3TL1 | Power Field-Effect Transistor, | ROHM Semiconductor | SIHD7N60ET1-GE3 vs R6007END3TL1 |