Part Details for SIHF28N60EF-GE3 by Vishay Intertechnologies
Overview of SIHF28N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIHF28N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHF28N60EF-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 28A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF28N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$3.0375 / $3.8588 | Buy Now |
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DISTI #
78-SIHF28N60EF-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant | 0 |
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$3.1100 | Order Now |
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Future Electronics | 600V, 28A, 0.123OHM, TO-200FP EF SERIES RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$3.0500 / $3.3400 | Buy Now |
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Future Electronics | 600V, 28A, 0.123OHM, TO-200FP EF SERIES RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$3.0500 / $3.3400 | Buy Now |
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DISTI #
SIHF28N60EF-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 28A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF28N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.0375 / $3.8588 | Buy Now |
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DISTI #
SIHF28N60EF-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 18A, Idm: 75A, 39W, TO220FP Min Qty: 1 | 0 |
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$4.6200 / $6.9300 | RFQ |
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DISTI #
SIHF28N60EF-GE3
|
Avnet Americas | Trans MOSFET N-CH 600V 28A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF28N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.0375 / $3.8588 | Buy Now |
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DISTI #
SIHF28N60EF-GE3
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EBV Elektronik | Trans MOSFET N-CH 600V 28A 3-Pin TO-220FP (Alt: SIHF28N60EF-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 2 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHF28N60EF-GE3
SIHF28N60EF-GE3 CAD Models
SIHF28N60EF-GE3 Part Data Attributes
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SIHF28N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHF28N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 691 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHF28N60EF-GE3
This table gives cross-reference parts and alternative options found for SIHF28N60EF-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF28N60EF-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| R6020ENX | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF28N60EF-GE3 vs R6020ENX |
| IPA60R125C6 | Power Field-Effect Transistor, 30A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SIHF28N60EF-GE3 vs IPA60R125C6 |
| SIHF30N60E-GE3 | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULL PAK-3 | Vishay Intertechnologies | SIHF28N60EF-GE3 vs SIHF30N60E-GE3 |
| R6030ENX | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF28N60EF-GE3 vs R6030ENX |
| R6020ENZC8 | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PF, 3 PIN | ROHM Semiconductor | SIHF28N60EF-GE3 vs R6020ENZC8 |
| R6030ENZC8 | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PF, 3 PIN | ROHM Semiconductor | SIHF28N60EF-GE3 vs R6030ENZC8 |
| R6030KNX | Power Field-Effect Transistor, 30A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN | ROHM Semiconductor | SIHF28N60EF-GE3 vs R6030KNX |