Part Details for SIHF540S-GE3 by Vishay Intertechnologies
Overview of SIHF540S-GE3 by Vishay Intertechnologies
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHF540S-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHF540S-GE3
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Avnet Americas | TRANS MOSFET N-CH 100V 28A 3-PIN(2+TAB) D2PAK - Rail/Tube (Alt: SIHF540S-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.6561 / $0.8335 | Buy Now |
DISTI #
78-SIHF540S-GE3
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Mouser Electronics | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant | 395 |
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$0.6970 / $1.6200 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks | 0 |
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$0.6400 | Buy Now |
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Quest Components | 781 |
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$0.8342 / $2.0224 | Buy Now | |
DISTI #
SIHF540S-GE3
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TTI | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
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$0.6700 / $0.7040 | Buy Now |
DISTI #
SIHF540S-GE3
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TME | Transistor: N-MOSFET, unipolar, 100V, 20A, Idm: 110A, 150W Min Qty: 1 | 0 |
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$0.6020 / $0.9020 | RFQ |
DISTI #
SIHF540S-GE3
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EBV Elektronik | (Alt: SIHF540S-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHF540S-GE3
SIHF540S-GE3 CAD Models
SIHF540S-GE3 Part Data Attributes
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SIHF540S-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHF540S-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHF540S-GE3
This table gives cross-reference parts and alternative options found for SIHF540S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF540S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF540S | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | SIHF540S-GE3 vs IRF540S |
SIHF540STRL-GE3 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SIHF540S-GE3 vs SIHF540STRL-GE3 |
IRF540S | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | Vishay Intertechnologies | SIHF540S-GE3 vs IRF540S |
IRF540STRLPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | Vishay Intertechnologies | SIHF540S-GE3 vs IRF540STRLPBF |
SIHF540S-GE3 | TRANSISTOR 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHF540S-GE3 vs SIHF540S-GE3 |
IRF540STRRPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | SIHF540S-GE3 vs IRF540STRRPBF |
IRF540STRL | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | SIHF540S-GE3 vs IRF540STRL |
SIHF540STRL-GE3 | TRANSISTOR 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHF540S-GE3 vs SIHF540STRL-GE3 |
IRF540S | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | SIHF540S-GE3 vs IRF540S |
IRF540SPBF | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | International Rectifier | SIHF540S-GE3 vs IRF540SPBF |