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Transistors Power Field-Effect Transistors SIHF634S-GE3

SIHF634S-GE3
Description: TRANSISTOR POWER, FET, FET General Purpose Power

Overview of SIHF634S-GE3 by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for SIHF634S-GE3 by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # 70615646
RS SIHF634S-GE3 N-channel MOSFET Transistor, 8.1 A, 250 V, 3-Pin D2PAK | Siliconix / Vishay SIHF634S-GE3 RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $0.9900
  • 100 $0.9400
  • 500 $0.9000
  • 1,000 $0.8400
$0.8400 / $0.9900 RFQ

CAD Models for SIHF634S-GE3 by Vishay Siliconix
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Part Data Attributes for SIHF634S-GE3 by Vishay Siliconix
Parametric Data

SIHF634S-GE3
Vishay Siliconix
Buy Now
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY SILICONIX
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Configuration
SINGLE
Drain Current-Max (ID)
8.1 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
Operating Temperature-Max
150 °C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
74 W
Surface Mount
YES
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  1. SIHF634S-GE3
    Vishay Siliconix
    TRANSISTOR POWER, FET, FET General Purpose Power
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Alternate Parts for SIHF634S-GE3

This table gives cross-reference parts and alternative options found for SIHF634S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF634S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF634SPBF Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies SIHF634S-GE3 vs IRF634SPBF
IRF634STRL Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies SIHF634S-GE3 vs IRF634STRL
Part Number Description Manufacturer Compare
IRF634S Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN International Rectifier SIHF634S-GE3 vs IRF634S
IRF634STRL Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN Vishay Intertechnologies SIHF634S-GE3 vs IRF634STRL
IRF634STRL Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN International Rectifier SIHF634S-GE3 vs IRF634STRL
IRF634SPBF Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies SIHF634S-GE3 vs IRF634SPBF

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