Part Details for SIHFR1N60A-GE3 by Vishay Siliconix
Results Overview of SIHFR1N60A-GE3 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIHFR1N60A-GE3 Information
SIHFR1N60A-GE3 by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for SIHFR1N60A-GE3
SIHFR1N60A-GE3 CAD Models
SIHFR1N60A-GE3 Part Data Attributes
|
|
SIHFR1N60A-GE3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SIHFR1N60A-GE3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 1.4 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 36 W | |
| Surface Mount | YES |
Alternate Parts for SIHFR1N60A-GE3
This table gives cross-reference parts and alternative options found for SIHFR1N60A-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR1N60A-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR1N60ATR | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | SIHFR1N60A-GE3 vs IRFR1N60ATR |
| IRFR1N60ATRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | SIHFR1N60A-GE3 vs IRFR1N60ATRLPBF |
| IRFR1N60ATRLPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | SIHFR1N60A-GE3 vs IRFR1N60ATRLPBF |
| IRFR1N60ATRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | SIHFR1N60A-GE3 vs IRFR1N60ATRL |
| IRFR1N60ATRPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | SIHFR1N60A-GE3 vs IRFR1N60ATRPBF |