Datasheets
SIHFR1N60ATR-GE3 by:

Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET,

Part Details for SIHFR1N60ATR-GE3 by Vishay Intertechnologies

Overview of SIHFR1N60ATR-GE3 by Vishay Intertechnologies

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Price & Stock for SIHFR1N60ATR-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHFR1N60ATR-GE3
Avnet Americas - Tape and Reel (Alt: SIHFR1N60ATR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.3842
  • 4,000 $0.3718
  • 8,000 $0.3595
  • 12,000 $0.3450
  • 16,000 $0.3338
  • 20,000 $0.3181
  • 200,000 $0.3024
$0.3024 / $0.3842 Buy Now
DISTI # 78-SIHFR1N60ATR-GE3
Mouser Electronics MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant 0
  • 1 $0.8500
  • 10 $0.7470
  • 100 $0.5090
  • 500 $0.4260
  • 1,000 $0.3620
  • 2,000 $0.3220
  • 4,000 $0.3040
  • 10,000 $0.2820
$0.2820 / $0.8500 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 0
  • 2,000 $0.2990
$0.2990 Buy Now
DISTI # SIHFR1N60ATR-GE3
TTI MOSFET 600V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 0
  • 2,000 $0.3140
  • 4,000 $0.2980
  • 6,000 $0.2900
  • 10,000 $0.2800
$0.2800 / $0.3140 Buy Now
DISTI # SIHFR1N60ATR-GE3
Avnet Americas - Tape and Reel (Alt: SIHFR1N60ATR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.3842
  • 4,000 $0.3718
  • 8,000 $0.3595
  • 12,000 $0.3450
  • 16,000 $0.3338
  • 20,000 $0.3181
  • 200,000 $0.3024
$0.3024 / $0.3842 Buy Now
DISTI # SIHFR1N60ATR-GE3
Avnet Americas - Tape and Reel (Alt: SIHFR1N60ATR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.3842
  • 4,000 $0.3718
  • 8,000 $0.3595
  • 12,000 $0.3450
  • 16,000 $0.3338
  • 20,000 $0.3181
  • 200,000 $0.3024
$0.3024 / $0.3842 Buy Now

Part Details for SIHFR1N60ATR-GE3

SIHFR1N60ATR-GE3 CAD Models

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SIHFR1N60ATR-GE3 Part Data Attributes

SIHFR1N60ATR-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHFR1N60ATR-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
Factory Lead Time 12 Weeks
Configuration SINGLE
Drain Current-Max (ID) 1.4 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Surface Mount YES

Alternate Parts for SIHFR1N60ATR-GE3

This table gives cross-reference parts and alternative options found for SIHFR1N60ATR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR1N60ATR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60ATR
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60A
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60APBF
SIHFR1N60A-GE3 Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, Vishay Intertechnologies SIHFR1N60ATR-GE3 vs SIHFR1N60A-GE3
IRFR1N60ATRPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60ATRPBF
Part Number Description Manufacturer Compare
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60APBF
SIHFR1N60A-GE3 Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, Vishay Intertechnologies SIHFR1N60ATR-GE3 vs SIHFR1N60A-GE3
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60A
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60ATR
IRFR1N60ATRPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR1N60ATR-GE3 vs IRFR1N60ATRPBF

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