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Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHFR9024TR-GE3
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Avnet Americas | Transistor MOSFET P-CH 60V 8.8A 3-Pin TO-252 T/R - Tape and Reel (Alt: SIHFR9024TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.3024 / $0.3842 | Buy Now |
DISTI #
78-SIHFR9024TR-GE3
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Mouser Electronics | MOSFET -60V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant | 2700 |
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$0.2820 / $0.8500 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 | 0 |
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$0.2990 | Buy Now |
DISTI #
SIHFR9024TR-GE3
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TTI | MOSFET -60V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel | Americas - 0 |
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$0.2800 / $0.3180 | Buy Now |
DISTI #
SIHFR9024TR-GE3
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Avnet Americas | Transistor MOSFET P-CH 60V 8.8A 3-Pin TO-252 T/R - Tape and Reel (Alt: SIHFR9024TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.3024 / $0.3842 | Buy Now |
DISTI #
SIHFR9024TR-GE3
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TME | Transistor: P-MOSFET, unipolar, -60V, -5.6A, Idm: -35A, 42W Min Qty: 1 | 0 |
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$0.4500 / $0.7710 | RFQ |
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Chip1Cloud | MOSFET P-CH 60V 8.8A DPAK | 2180 |
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RFQ | |
DISTI #
SIHFR9024TR-GE3
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EBV Elektronik | Transistor MOSFET P-CH 60V 8.8A 3-Pin TO-252 T/R (Alt: SIHFR9024TR-GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 1 Weeks, 6 Days | EBV - 0 |
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Buy Now |
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SIHFR9024TR-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHFR9024TR-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 8.8 A | |
Drain-source On Resistance-Max | 0.28 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 35 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIHFR9024TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9024TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR9024TRLPBF | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | SIHFR9024TR-GE3 vs IRFR9024TRLPBF |
IRFR9024 | Power Field-Effect Transistor, 9.9A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | SIHFR9024TR-GE3 vs IRFR9024 |
IRFR9024PBF | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFR9024TR-GE3 vs IRFR9024PBF |
IRFR9024TRLPBF | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | SIHFR9024TR-GE3 vs IRFR9024TRLPBF |
IRFR9024 | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, D-PAK-3 | Vishay Intertechnologies | SIHFR9024TR-GE3 vs IRFR9024 |
SIHFR9024TL | TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9024TR-GE3 vs SIHFR9024TL |
SIHFR9024-GE3 | TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9024TR-GE3 vs SIHFR9024-GE3 |
IRFR9024PBF | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR9024TR-GE3 vs IRFR9024PBF |
IRFR9024TR | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | SIHFR9024TR-GE3 vs IRFR9024TR |
SIHFR9024TR-GE3 | TRANSISTOR 8.8 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9024TR-GE3 vs SIHFR9024TR-GE3 |