Datasheets
SIHFR9120-GE3 by:

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Part Details for SIHFR9120-GE3 by Vishay Intertechnologies

Overview of SIHFR9120-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SIHFR9120-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHFR9120-GE3
Avnet Americas MOSFET P-CHANNEL 100V - Tape and Reel (Alt: SIHFR9120-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3276
  • 6,000 $0.3171
  • 12,000 $0.3066
  • 18,000 $0.2941
  • 24,000 $0.2846
  • 30,000 $0.2712
  • 300,000 $0.2579
$0.2579 / $0.3276 Buy Now
DISTI # 78-SIHFR9120-GE3
Mouser Electronics MOSFET -100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant 8605
  • 1 $0.7200
  • 10 $0.6270
  • 100 $0.4340
  • 500 $0.3630
  • 1,000 $0.3090
  • 3,000 $0.2670
  • 6,000 $0.2540
  • 9,000 $0.2410
$0.2410 / $0.7200 Buy Now
Future Electronics . RoHS: Non Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 0
  • 3,000 $0.2550
$0.2550 Buy Now
DISTI # SIHFR9120-GE3
TTI MOSFET -100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Tube Americas - 0
  • 3,000 $0.2630
  • 6,000 $0.2500
  • 9,000 $0.2390
$0.2390 / $0.2630 Buy Now
DISTI # SIHFR9120-GE3
Avnet Americas MOSFET P-CHANNEL 100V - Tape and Reel (Alt: SIHFR9120-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3276
  • 6,000 $0.3171
  • 12,000 $0.3066
  • 18,000 $0.2941
  • 24,000 $0.2846
  • 30,000 $0.2712
  • 300,000 $0.2579
$0.2579 / $0.3276 Buy Now
DISTI # SIHFR9120-GE3
TME Transistor: P-MOSFET, unipolar, -100V, -5.6A, Idm: -22A, 42W Min Qty: 1 0
  • 1 $0.7630
  • 5 $0.5770
  • 25 $0.5090
  • 100 $0.4580
  • 500 $0.4280
$0.4280 / $0.7630 RFQ

Part Details for SIHFR9120-GE3

SIHFR9120-GE3 CAD Models

SIHFR9120-GE3 Part Data Attributes:

SIHFR9120-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHFR9120-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHFR9120-GE3

This table gives cross-reference parts and alternative options found for SIHFR9120-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9120-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR9120TRLPBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRLPBF
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120
IRFR9120PBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120PBF
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9120-GE3 vs IRFR9120
IRFR9120TRL Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRL
IRFR9120TRL Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9120-GE3 vs IRFR9120TRL
SIHFR9120TR-GE3 TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9120-GE3 vs SIHFR9120TR-GE3
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation SIHFR9120-GE3 vs IRFR9120
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SIHFR9120-GE3 vs IRFR9120
IRFR9120-T1 Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor SIHFR9120-GE3 vs IRFR9120-T1
Part Number Description Manufacturer Compare
IRFR9120TRL Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9120-GE3 vs IRFR9120TRL
IRFR9120TRLPBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRLPBF
IRFR9120TRL Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRL
IRFR9120-T1 Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor SIHFR9120-GE3 vs IRFR9120-T1
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SIHFR9120-GE3 vs IRFR9120
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9120-GE3 vs IRFR9120
IRFR9120PBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120PBF
SIHFR9120TR-GE3 TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9120-GE3 vs SIHFR9120TR-GE3
IRFR9120TRPBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRPBF

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