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Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHFR9120-GE3
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Avnet Americas | MOSFET P-CHANNEL 100V - Tape and Reel (Alt: SIHFR9120-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.2579 / $0.3276 | Buy Now |
DISTI #
78-SIHFR9120-GE3
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Mouser Electronics | MOSFET -100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant | 8605 |
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$0.2410 / $0.7200 | Buy Now |
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Future Electronics | . RoHS: Non Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.2550 | Buy Now |
DISTI #
SIHFR9120-GE3
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TTI | MOSFET -100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Tube | Americas - 0 |
|
$0.2390 / $0.2630 | Buy Now |
DISTI #
SIHFR9120-GE3
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Avnet Americas | MOSFET P-CHANNEL 100V - Tape and Reel (Alt: SIHFR9120-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.2579 / $0.3276 | Buy Now |
DISTI #
SIHFR9120-GE3
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TME | Transistor: P-MOSFET, unipolar, -100V, -5.6A, Idm: -22A, 42W Min Qty: 1 | 0 |
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$0.4280 / $0.7630 | RFQ |
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SIHFR9120-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHFR9120-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 210 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 5.6 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 42 W | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIHFR9120-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9120-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR9120TRLPBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR9120-GE3 vs IRFR9120TRLPBF |
IRFR9120 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | SIHFR9120-GE3 vs IRFR9120 |
IRFR9120PBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR9120-GE3 vs IRFR9120PBF |
IRFR9120 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | SIHFR9120-GE3 vs IRFR9120 |
IRFR9120TRL | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Vishay Intertechnologies | SIHFR9120-GE3 vs IRFR9120TRL |
IRFR9120TRL | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | SIHFR9120-GE3 vs IRFR9120TRL |
SIHFR9120TR-GE3 | TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9120-GE3 vs SIHFR9120TR-GE3 |
IRFR9120 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | SIHFR9120-GE3 vs IRFR9120 |
IRFR9120 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | SIHFR9120-GE3 vs IRFR9120 |
IRFR9120-T1 | Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | SIHFR9120-GE3 vs IRFR9120-T1 |