Datasheets
SIHG018N60E-GE3 by:

Power Field-Effect Transistor,

Part Details for SIHG018N60E-GE3 by Vishay Intertechnologies

Overview of SIHG018N60E-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for SIHG018N60E-GE3

Part # Distributor Description Stock Price Buy
DISTI # 42AJ0406
Newark N-Channel 600V |Vishay SIHG018N60E-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 45
  • 1 $18.0200
  • 10 $16.3800
  • 25 $14.7500
  • 50 $14.3400
  • 100 $13.9300
$13.9300 / $18.0200 Buy Now
DISTI # SIHG018N60E-GE3
Avnet Americas Transistor MOSFET N-CH 600V 99A 3-Pin TO-247AC T/R - Tape and Reel (Alt: SIHG018N60E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 500 $14.1525
$14.1525 Buy Now
DISTI # 78-SIHG018N60E-GE3
Mouser Electronics MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant 808
  • 1 $16.5500
  • 10 $14.5900
  • 25 $14.5800
  • 100 $12.6200
  • 500 $11.4200
$11.4200 / $16.5500 Buy Now
Future Electronics MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 0
  • 500 $10.4100
$10.4100 Buy Now
DISTI # SIHG018N60E-GE3
TTI MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 25 Package Multiple: 25 Container: Tube Americas - 2425
In Stock
  • 25 $13.5300
  • 100 $13.2700
  • 500 $13.0100
$13.0100 / $13.5300 Buy Now
DISTI # SIHG018N60E-GE3
Avnet Americas Transistor MOSFET N-CH 600V 99A 3-Pin TO-247AC T/R - Tape and Reel (Alt: SIHG018N60E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 500 $14.1525
$14.1525 Buy Now
DISTI # SIHG018N60E-GE3
TME Transistor: N-MOSFET, unipolar, 600V, 63A, Idm: 325A, 524W, TO247AC Min Qty: 1 0
  • 1 $21.9100
  • 5 $19.7600
  • 25 $17.4000
  • 100 $15.6800
  • 500 $14.6100
$14.6100 / $21.9100 RFQ
DISTI # SIHG018N60E-GE3
Avnet Americas Transistor MOSFET N-CH 600V 99A 3-Pin TO-247AC T/R - Tape and Reel (Alt: SIHG018N60E-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 500 $14.1525
$14.1525 Buy Now
DISTI # 3019085
element14 Asia-Pacific MOSFET, N-CH, 99A, 600V, TO-247AC RoHS: Compliant Min Qty: 1 Container: Each 450
  • 1 $17.3712
  • 5 $16.3364
  • 10 $15.3016
  • 50 $14.2742
  • 100 $13.2467
  • 250 $12.9825
$12.9825 / $17.3712 Buy Now
DISTI # 3019085
Farnell MOSFET, N-CH, 99A, 600V, TO-247AC RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 1 Days Container: Each 450
  • 1 $17.0353
  • 5 $15.8853
  • 10 $14.7353
  • 50 $13.7496
  • 100 $12.7639
  • 250 $12.5111
$12.5111 / $17.0353 Buy Now

Part Details for SIHG018N60E-GE3

SIHG018N60E-GE3 CAD Models

SIHG018N60E-GE3 Part Data Attributes

SIHG018N60E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHG018N60E-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Date Of Intro 2018-11-13
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 902 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 99 A
Drain-source On Resistance-Max 0.023 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 524 W
Pulsed Drain Current-Max (IDM) 325 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 190 ns
Turn-on Time-Max (ton) 245 ns

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