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Transistors / Power Field-Effect Transistors / SIHG068N60EF-GE3
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SIHG068N60EF-GE3 by:

Power Field-Effect Transistor,

Part Details for SIHG068N60EF-GE3 by Vishay Intertechnologies

Overview of SIHG068N60EF-GE3 by Vishay Intertechnologies

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Price & Stock for SIHG068N60EF-GE3

Part # Distributor Description Stock Price Buy
DISTI # 77AH0222
Newark Mosfet, N Ch, 600V, 41A, To-247Ac Rohs Compliant: Yes |Vishay SIHG068N60EF-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 344
  • 1 $6.6800
  • 10 $5.7100
  • 25 $5.4200
  • 50 $5.0800
  • 100 $4.7300
  • 500 $3.9100
$3.9100 / $6.6800 Buy Now
DISTI # SIHG068N60EF-GE3
Avnet Americas Transistor MOSFET N-CH 600V 41A 3-Pin TO-247AC (Alt: SIHG068N60EF-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days 0
  • 500 $3.9480
$3.9480 Buy Now
DISTI # 78-SIHG068N60EF-GE3
Mouser Electronics MOSFET 600V N-CHANNEL RoHS: Compliant 856
  • 1 $5.8300
  • 10 $4.9000
  • 25 $4.7400
  • 100 $3.9600
  • 250 $3.8400
  • 500 $3.5900
  • 1,000 $2.8300
$2.8300 / $5.8300 Buy Now
Future Electronics EF Series Power MOSFET With Fast Body Diode TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube 975
Tube
  • 1 $3.6400
  • 20 $3.5000
  • 75 $3.3900
  • 200 $3.3100
  • 750 $3.1300
$3.1300 / $3.6400 Buy Now
Future Electronics EF Series Power MOSFET With Fast Body Diode TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 500 Container: Cut Tape/Mini-Reel 0
Cut Tape/Mini-Reel
  • 1 $3.7600
  • 5 $3.5800
  • 30 $3.4000
  • 100 $3.2800
  • 250 $3.1300
$3.1300 / $3.7600 Buy Now
DISTI # SIHG068N60EF-GE3
TTI MOSFET 600V N-CHANNEL RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 500 Container: Reel Americas - 2500
In Stock
  • 500 $3.5200
  • 1,000 $2.8000
$2.8000 / $3.5200 Buy Now
DISTI # SIHG068N60EF-GE3
Avnet Americas Transistor MOSFET N-CH 600V 41A 3-Pin TO-247AC (Alt: SIHG068N60EF-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days 0
  • 500 $3.9480
$3.9480 Buy Now
DISTI # SIHG068N60EF-GE3
TME Transistor: N-MOSFET, unipolar, 600V, 26A, Idm: 115A, 250W, TO247AC Min Qty: 1 0
  • 1 $6.6800
  • 5 $6.0000
  • 25 $5.3100
  • 100 $4.7700
  • 500 $4.4500
$4.4500 / $6.6800 RFQ
DISTI # SIHG068N60EF-GE3
Avnet Americas Transistor MOSFET N-CH 600V 41A 3-Pin TO-247AC (Alt: SIHG068N60EF-GE3) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days 0
  • 500 $3.9480
$3.9480 Buy Now
Chips Pulse Industry Limited 600V 41A 250W 68mohms@16A 10V 5V@250uA N Channel 2628pF@100V 77nC@10V -55&#8451~ 150&#8451@(Tj) TO-247AC MOSFETs ROHS Purchase Online, Ship Immediately 85
  • 1 $4.2156
  • 10 $3.7014
  • 25 $3.3885
  • 100 $3.1261
$3.1261 / $4.2156 Buy Now
DISTI # 3408713
element14 Asia-Pacific MOSFET, N CH, 600V, 41A, TO-247AC RoHS: Compliant Min Qty: 1 Container: Each 344
  • 1 $6.2381
  • 10 $5.2473
  • 25 $5.0785
  • 100 $4.2346
  • 250 $4.1171
  • 500 $3.9924
$3.9924 / $6.2381 Buy Now
DISTI # 3408713
Farnell MOSFET, N CH, 600V, 41A, TO-247AC RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 1 Days Container: Each 344
  • 1 $6.4188
  • 10 $4.6206
  • 100 $3.7339
  • 500 $3.3718
  • 1,000 $3.3093
$3.3093 / $6.4188 Buy Now
LCSC 600V 41A 250W 68m16A10V 5V250uA 1PCSNChannel TO-247AC MOSFETs ROHS 71
  • 1 $4.6840
  • 10 $4.1127
  • 25 $3.7650
  • 100 $3.4734
$3.4734 / $4.6840 Buy Now

Part Details for SIHG068N60EF-GE3

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SIHG068N60EF-GE3 Part Data Attributes

Parametric Data
SIHG068N60EF-GE3 Vishay Intertechnologies
Buy Now Datasheet
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SIHG068N60EF-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 22 Weeks
Date Of Intro 2020-02-16
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 226 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 41 A
Drain-source On Resistance-Max 0.068 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 115 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 150 ns
Turn-on Time-Max (ton) 137 ns

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