Datasheets
SIHG22N60E-GE3 by:

Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for SIHG22N60E-GE3 by Vishay Siliconix

Overview of SIHG22N60E-GE3 by Vishay Siliconix

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Applications Education and Research Consumer Electronics Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for SIHG22N60E-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHG22N60E-GE3-ND
DigiKey MOSFET N-CH 600V 21A TO247AC Min Qty: 1 Lead time: 15 Weeks Container: Tube 476
In Stock
  • 1 $4.2800
  • 25 $3.3936
  • 100 $2.9088
  • 500 $2.5856
  • 1,000 $2.2139
  • 2,000 $2.0846
  • 5,000 $2.0000
$2.0000 / $4.2800 Buy Now

Part Details for SIHG22N60E-GE3

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SIHG22N60E-GE3 Part Data Attributes:

SIHG22N60E-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SIHG22N60E-GE3 Vishay Siliconix Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 367 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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