Datasheets
SIHG24N65E-E3 by:

Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3

Part Details for SIHG24N65E-E3 by Vishay Intertechnologies

Overview of SIHG24N65E-E3 by Vishay Intertechnologies

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Price & Stock for SIHG24N65E-E3

Part # Distributor Description Stock Price Buy
DISTI # SIHG24N65E-E3
Avnet Americas Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG24N65E-E3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 500 $3.7730
  • 1,000 $3.6520
  • 2,000 $3.5310
  • 3,000 $3.3880
  • 4,000 $3.2780
  • 5,000 $3.1240
  • 50,000 $2.9700
$2.9700 / $3.7730 Buy Now
DISTI # 781-SIHG24N65E-E3
Mouser Electronics MOSFET 650V Vds 30V Vgs TO-247AC RoHS: Compliant 0
  • 500 $3.3400
  • 1,000 $3.1400
  • 2,500 $3.0400
$3.0400 / $3.3400 Order Now
Future Electronics E-Series N-Channel 650 V 0.145 Ω 122 nC Flange Mount Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.1400
  • 150 $3.0600
  • 250 $3.0200
  • 750 $2.9500
  • 1,250 $2.8800
$2.8800 / $3.1400 Buy Now
Future Electronics E-Series N-Channel 650 V 0.145 Ω 122 nC Flange Mount Power Mosfet - TO-247AC RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.1400
  • 150 $3.0600
  • 250 $3.0200
  • 750 $2.9500
  • 1,250 $2.8800
$2.8800 / $3.1400 Buy Now
Bristol Electronics   100
RFQ
DISTI # SIHG24N65E-E3
TTI MOSFET 650V Vds 30V Vgs TO-247AC RoHS: Compliant pbFree: Pb-Free Min Qty: 500 Package Multiple: 50 Container: Tube Americas - 0
  • 500 $3.0400
  • 750 $2.9800
  • 1,250 $2.9200
$2.9200 / $3.0400 Buy Now
DISTI # SIHG24N65E-E3
Avnet Americas Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHG24N65E-E3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 22 Weeks, 0 Days Container: Tube 0
  • 500 $3.7730
  • 1,000 $3.6520
  • 2,000 $3.5310
  • 3,000 $3.3880
  • 4,000 $3.2780
  • 5,000 $3.1240
  • 50,000 $2.9700
$2.9700 / $3.7730 Buy Now
DISTI # 2079775
Farnell MOSFET, N CH, 650V, 24A, TO-247AC RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 1 Days Container: Each 0
  • 1 $4.4078
  • 25 $3.9419
  • 100 $3.5011
  • 250 $3.0981
  • 500 $2.7832
$2.7832 / $4.4078 Buy Now

Part Details for SIHG24N65E-E3

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SIHG24N65E-E3 Part Data Attributes:

SIHG24N65E-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHG24N65E-E3 Vishay Intertechnologies Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 508 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 70 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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