Part Details for SIHG28N60EF-GE3 by Vishay Intertechnologies
Overview of SIHG28N60EF-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHG28N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIHG28N60EF-GE3
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Avnet Americas | N-CHANNEL 600V - Bulk (Alt: SIHG28N60EF-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks, 0 Days Container: Bulk | 0 |
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$3.2130 / $4.0817 | Buy Now |
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DISTI #
78-SIHG28N60EF-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs TO-247AC RoHS: Compliant | 0 |
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$3.1000 / $3.8400 | Order Now |
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Future Electronics | EF-Series N-Channel 600 V 250 W 123 mΩ 120 nC Flange Mount Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box | 0Box |
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$3.2300 / $3.3200 | Buy Now |
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Future Electronics | EF-Series N-Channel 600 V 250 W 123 mΩ 120 nC Flange Mount Power Mosfet - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Container: Box | 0Box |
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$3.2300 / $3.3200 | Buy Now |
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Bristol Electronics | 136 |
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RFQ | ||
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Quest Components | 108 |
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$4.5880 / $7.4400 | Buy Now | |
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DISTI #
SIHG28N60EF-GE3
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Avnet Americas | N-CHANNEL 600V - Bulk (Alt: SIHG28N60EF-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks, 0 Days Container: Bulk | 0 |
|
$3.2130 / $4.0817 | Buy Now |
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DISTI #
SIHG28N60EF-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 18A, Idm: 75A, 250W, TO247AC Min Qty: 1 | 0 |
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$4.3600 / $6.5400 | RFQ |
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DISTI #
SIHG28N60EF-GE3
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Avnet Americas | N-CHANNEL 600V - Bulk (Alt: SIHG28N60EF-GE3) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 13 Weeks, 0 Days Container: Bulk | 0 |
|
$3.2130 / $4.0817 | Buy Now |
|
DISTI #
SIHG28N60EF-GE3
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EBV Elektronik | N-CHANNEL 600V (Alt: SIHG28N60EF-GE3) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 2 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHG28N60EF-GE3
SIHG28N60EF-GE3 CAD Models
SIHG28N60EF-GE3 Part Data Attributes
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SIHG28N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHG28N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 691 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.123 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 75 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHG28N60EF-GE3
This table gives cross-reference parts and alternative options found for SIHG28N60EF-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHG28N60EF-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TK31V60X,LQ | 30.8A, 600V, 0.098ohm, N-CHANNEL, Si, POWER, MOSFET | Toshiba America Electronic Components | SIHG28N60EF-GE3 vs TK31V60X,LQ |
| SIHW33N60E-GE3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHG28N60EF-GE3 vs SIHW33N60E-GE3 |
| IPW60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHG28N60EF-GE3 vs IPW60R099CPA |
| SIHG33N60E-GE3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3 | Vishay Intertechnologies | SIHG28N60EF-GE3 vs SIHG33N60E-GE3 |
| IPI65R110CFD | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Infineon Technologies AG | SIHG28N60EF-GE3 vs IPI65R110CFD |
| SIHB33N60EF-GE3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2 | Vishay Intertechnologies | SIHG28N60EF-GE3 vs SIHB33N60EF-GE3 |
| TK28N65W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SIHG28N60EF-GE3 vs TK28N65W5 |
| SIHB33N60E-GE3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SIHG28N60EF-GE3 vs SIHB33N60E-GE3 |
| IPB65R110CFDATMA1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | SIHG28N60EF-GE3 vs IPB65R110CFDATMA1 |
| SCT3080ALC11 | Power Field-Effect Transistor, 30A I(D), 650V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247, TO-247N, 3 PIN | ROHM Semiconductor | SIHG28N60EF-GE3 vs SCT3080ALC11 |