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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
99AC0535
|
Newark | Mosfet, N-Ch, 600V, 34A, Powerpak, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:34A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Vishay SIHH068N60E-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 50 |
|
$3.7900 | Buy Now |
DISTI #
SIHH068N60E-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 34A 5-Pin PowerPAK - Tape and Reel (Alt: SIHH068N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$5.9120 | Buy Now |
DISTI #
99AC0535
|
Avnet Americas | Transistor MOSFET N-CH 600V 34A 5-Pin PowerPAK - Bulk (Alt: 99AC0535) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 4 Days Container: Bulk | 50 Partner Stock |
|
$5.8200 / $8.1500 | Buy Now |
DISTI #
78-SIHH068N60E-T1GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 RoHS: Compliant | 2855 |
|
$4.1600 / $7.8400 | Buy Now |
|
Future Electronics | 600v e Series MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$4.0800 | Buy Now |
DISTI #
SIHH068N60E-T1-GE3
|
TTI | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$4.4000 | Buy Now |
DISTI #
SIHH068N60E-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 34A 5-Pin PowerPAK - Tape and Reel (Alt: SIHH068N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$5.9120 | Buy Now |
DISTI #
99AC0535
|
Avnet Americas | Transistor MOSFET N-CH 600V 34A 5-Pin PowerPAK - Bulk (Alt: 99AC0535) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 4 Days Container: Bulk | 50 Partner Stock |
|
$5.8200 / $8.1500 | Buy Now |
DISTI #
SIHH068N60E-T1-GE3
|
TME | Transistor: N-MOSFET, unipolar, 600V, 22A, Idm: 100A, 202W Min Qty: 1 | 0 |
|
$6.1000 / $9.1600 | RFQ |
DISTI #
SIHH068N60E-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 600V 34A 5-Pin PowerPAK - Tape and Reel (Alt: SIHH068N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$5.9120 | Buy Now |
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SIHH068N60E-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHH068N60E-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, S-PSSO-N4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks, 4 Days | |
Date Of Intro | 2018-08-20 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 226 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 34 A | |
Drain-source On Resistance-Max | 0.068 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JESD-30 Code | S-PSSO-N4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 202 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 150 ns | |
Turn-on Time-Max (ton) | 306 ns |
This table gives cross-reference parts and alternative options found for SIHH068N60E-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHH068N60E-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIHK065N60E-T1-GE3 | Power Field-Effect Transistor, 34A I(D), 600V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Vishay Intertechnologies | SIHH068N60E-T1-GE3 vs SIHK065N60E-T1-GE3 |