Part Details for SIHH120N60E-T1-GE3 by Vishay Intertechnologies
Overview of SIHH120N60E-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHH120N60E-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
81AC3462
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Newark | N-Channel 600V |Vishay SIHH120N60E-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.8300 / $3.4400 | Buy Now |
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DISTI #
99AC0537
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Newark | Mosfet, N-Ch, 600V, 24A, 150Deg C, 156W, Transistor Polarity:N Channel, Continuous Drain Current Id:24A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.106Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Vishay SIHH120N60E-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$3.9100 / $6.0900 | Buy Now |
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DISTI #
SIHH120N60E-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 600V 24A 5-Pin PowerPAK - Tape and Reel (Alt: SIHH120N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$3.9716 | Buy Now |
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DISTI #
78-SIHH120N60E-T1GE3
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Mouser Electronics | MOSFET 600V Vds, +/-30V Vgs PowerPAK 8x8 RoHS: Compliant | 2398 |
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$2.8500 / $5.8600 | Buy Now |
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Future Electronics | Single N-Channel 600 V 120 mOhm SMT E Series Power Mosfet - PowerPAK 8 x 8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$2.7700 | Buy Now |
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DISTI #
SIHH120N60E-T1-GE3
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TTI | MOSFET 600V Vds, +/-30V Vgs PowerPAK 8x8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$2.8200 | Buy Now |
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DISTI #
SIHH120N60E-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 600V 24A 5-Pin PowerPAK - Tape and Reel (Alt: SIHH120N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$3.9716 | Buy Now |
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DISTI #
SIHH120N60E-T1-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 15A, Idm: 57A, 156W Min Qty: 1 | 0 |
|
$4.1100 / $6.1700 | RFQ |
|
DISTI #
3014144RL
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element14 Asia-Pacific | MOSFET, N-CH, 600V, 24A, 150DEG C, 156W RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$3.2088 / $3.9686 | Buy Now |
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DISTI #
3014144
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element14 Asia-Pacific | MOSFET, N-CH, 600V, 24A, 150DEG C, 156W RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$3.2088 / $6.1816 | Buy Now |
Part Details for SIHH120N60E-T1-GE3
SIHH120N60E-T1-GE3 CAD Models
SIHH120N60E-T1-GE3 Part Data Attributes:
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SIHH120N60E-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHH120N60E-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Date Of Intro | 2018-08-20 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 56 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JESD-30 Code | S-PSSO-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 57 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 136 ns | |
| Turn-on Time-Max (ton) | 144 ns |