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Part Details for SIHJ8N60E-T1-GE3 by Vishay Intertechnologies
Overview of SIHJ8N60E-T1-GE3 by Vishay Intertechnologies
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIHJ8N60E-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIHJ8N60E-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ8N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.2858 | Buy Now |
|
DISTI #
78-SIHJ8N60E-T1-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs PowerPAK SO-8L RoHS: Compliant | 2898 |
|
$0.8860 / $2.1100 | Buy Now |
|
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
|
$0.9460 | Buy Now |
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Bristol Electronics | 2680 |
|
RFQ | ||
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Quest Components | 2144 |
|
$1.0632 / $2.8352 | Buy Now | |
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DISTI #
SIHJ8N60E-T1-GE3
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TTI | MOSFET 600V Vds 30V Vgs PowerPAK SO-8L RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
|
$0.8900 / $0.9200 | Buy Now |
|
DISTI #
SIHJ8N60E-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ8N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.2858 | Buy Now |
|
DISTI #
SIHJ8N60E-T1-GE3
|
TME | Transistor: N-MOSFET, unipolar, 600V, 5A, Idm: 18A, 89W Min Qty: 1 | 0 |
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$1.3900 / $2.0800 | RFQ |
|
DISTI #
SIHJ8N60E-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIHJ8N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$1.2858 | Buy Now |
|
DISTI #
SIHJ8N60E-T1-GE3
|
EBV Elektronik | Trans MOSFET N-CH 600V 8A 5-Pin PowerPAK SO T/R (Alt: SIHJ8N60E-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 2 Days | EBV - 0 |
|
Buy Now |
Part Details for SIHJ8N60E-T1-GE3
SIHJ8N60E-T1-GE3 CAD Models
SIHJ8N60E-T1-GE3 Part Data Attributes
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SIHJ8N60E-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHJ8N60E-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 88 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.52 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 89 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 86 ns | |
| Turn-on Time-Max (ton) | 58 ns |