Part Details for SIHP14N50D-E3 by Vishay Intertechnologies
Overview of SIHP14N50D-E3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHP14N50D-E3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SIHP14N50D-E3
|
Avnet Americas | MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHP14N50D-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel | 0 |
|
$1.2998 | Buy Now |
|
Bristol Electronics | 200 |
|
RFQ |
Part Details for SIHP14N50D-E3
SIHP14N50D-E3 CAD Models
SIHP14N50D-E3 Part Data Attributes
|
SIHP14N50D-E3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHP14N50D-E3
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 56 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 38 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHP14N50D-E3
This table gives cross-reference parts and alternative options found for SIHP14N50D-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP14N50D-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
UF450L-T3P-T | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3P, 3 PIN | Unisonic Technologies Co Ltd | SIHP14N50D-E3 vs UF450L-T3P-T |
SIHP14N50D-GE3 | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHP14N50D-E3 vs SIHP14N50D-GE3 |
SIHP14N50D-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHP14N50D-E3 vs SIHP14N50D-GE3 |
R5013ANJTLL | Power Field-Effect Transistor, 13A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LPTL, 3 PIN | ROHM Semiconductor | SIHP14N50D-E3 vs R5013ANJTLL |
SIHP14N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHP14N50D-E3 vs SIHP14N50D-E3 |
UF450G-T3P-T | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, TO-3P, 3 PIN | Unisonic Technologies Co Ltd | SIHP14N50D-E3 vs UF450G-T3P-T |