Datasheets
SIHP22N60AE-BE3 by:

Power Field-Effect Transistor, 20A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for SIHP22N60AE-BE3 by Vishay Intertechnologies

Overview of SIHP22N60AE-BE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHP22N60AE-BE3

Part # Distributor Description Stock Price Buy
DISTI # 42AJ0443
Newark N-Channel 600V |Vishay SIHP22N60AE-BE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.9300
  • 2,500 $1.8000
$1.8000 / $1.9300 Buy Now
DISTI # SIHP22N60AE-BE3
Avnet Americas Transistor MOSFET N-CH 600V 20A 3-Pin TO-220AB (Alt: SIHP22N60AE-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days 0
  • 1,000 $2.3135
  • 2,000 $2.2393
  • 4,000 $2.1652
  • 6,000 $2.0775
  • 8,000 $2.0100
  • 10,000 $1.9156
  • 100,000 $1.8212
$1.8212 / $2.3135 Buy Now
DISTI # 78-SIHP22N60AE-BE3
Mouser Electronics MOSFET N-CHANNEL 600V RoHS: Compliant 3681
  • 1 $3.6100
  • 10 $3.1100
  • 50 $2.6300
  • 100 $2.4400
  • 500 $2.3900
  • 1,000 $2.2900
$2.2900 / $3.6100 Buy Now
Future Electronics 650V,20A,.156OHM,TO-220, N-CH MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $2.1600
  • 2,000 $2.1000
$2.1000 / $2.1600 Buy Now
DISTI # SIHP22N60AE-BE3
TTI MOSFET N-CHANNEL 600V RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 2950
In Stock
  • 50 $2.2800
  • 100 $2.2300
  • 500 $2.1900
  • 1,000 $2.1400
  • 5,000 $2.1000
$2.1000 / $2.2800 Buy Now
DISTI # SIHP22N60AE-BE3
Avnet Americas Transistor MOSFET N-CH 600V 20A 3-Pin TO-220AB (Alt: SIHP22N60AE-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days 0
  • 1,000 $2.3135
  • 2,000 $2.2393
  • 4,000 $2.1652
  • 6,000 $2.0775
  • 8,000 $2.0100
  • 10,000 $1.9156
  • 100,000 $1.8212
$1.8212 / $2.3135 Buy Now

Part Details for SIHP22N60AE-BE3

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SIHP22N60AE-BE3 Part Data Attributes:

SIHP22N60AE-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHP22N60AE-BE3 Vishay Intertechnologies Power Field-Effect Transistor, 20A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 204 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.18 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 179 W
Pulsed Drain Current-Max (IDM) 49 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 132 ns
Turn-on Time-Max (ton) 104 ns

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