Datasheets
SIHP25N50E-BE3 by:

Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

Part Details for SIHP25N50E-BE3 by Vishay Intertechnologies

Overview of SIHP25N50E-BE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHP25N50E-BE3

Part # Distributor Description Stock Price Buy
DISTI # 42AJ0447
Newark N-Channel 500V |Vishay SIHP25N50E-BE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1,000 $1.6500
  • 2,500 $1.5400
$1.5400 / $1.6500 Buy Now
DISTI # SIHP25N50E-BE3
Avnet Americas Transistor MOSFET N-CH 500V 26A 3-Pin TO-220AB (Alt: SIHP25N50E-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days 0
  • 1,000 $1.9774
  • 2,000 $1.9140
  • 4,000 $1.8506
  • 6,000 $1.7756
  • 8,000 $1.7180
  • 10,000 $1.6373
  • 100,000 $1.5566
$1.5566 / $1.9774 Buy Now
DISTI # 78-SIHP25N50E-BE3
Mouser Electronics MOSFET N-CHANNEL 500V RoHS: Compliant 521
  • 1 $3.0900
  • 10 $2.6400
  • 50 $2.2400
  • 100 $2.0600
  • 250 $2.0300
  • 500 $1.9800
  • 1,000 $1.9200
$1.9200 / $3.0900 Buy Now
Future Electronics SIHP25N50E Series 500 V 26 A 145 mOhm Flange Mount Power - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.8100
  • 2,000 $1.7700
$1.7700 / $1.8100 Buy Now
DISTI # SIHP25N50E-BE3
TTI MOSFET N-CHANNEL 500V RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 9000
In Stock
  • 50 $1.9400
  • 100 $1.9100
  • 250 $1.8700
  • 500 $1.8300
  • 1,000 $1.8000
$1.8000 / $1.9400 Buy Now
DISTI # SIHP25N50E-BE3
Avnet Americas Transistor MOSFET N-CH 500V 26A 3-Pin TO-220AB (Alt: SIHP25N50E-BE3) RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 22 Weeks, 0 Days 0
  • 1,000 $1.9774
  • 2,000 $1.9140
  • 4,000 $1.8506
  • 6,000 $1.7756
  • 8,000 $1.7180
  • 10,000 $1.6373
  • 100,000 $1.5566
$1.5566 / $1.9774 Buy Now
DISTI # SIHP25N50E-BE3
TME Transistor: N-MOSFET, unipolar, 500V, 26A, Idm: 50A, 250W, TO220AB Min Qty: 1 0
  • 1 $2.8800
  • 10 $2.5900
  • 50 $2.2900
  • 250 $2.0600
  • 1,000 $1.8600
$1.8600 / $2.8800 RFQ

Part Details for SIHP25N50E-BE3

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SIHP25N50E-BE3 Part Data Attributes:

SIHP25N50E-BE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHP25N50E-BE3 Vishay Intertechnologies Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 273 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 8 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 50 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 144 ns
Turn-on Time-Max (ton) 110 ns

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