Part Details for SIHP33N60EF-GE3 by Vishay Intertechnologies
Overview of SIHP33N60EF-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIHP33N60EF-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y6763
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Newark | Mosfet, N Channel, 600V, 33A, To-220Ab-3, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:33A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:-Rohs Compliant: Yes |Vishay SIHP33N60EF-GE3 Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$4.8200 | Buy Now |
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DISTI #
SIHP33N60EF-GE3
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Avnet Americas | MOS Power Transistors HV (>= 200V) - Tape and Reel (Alt: SIHP33N60EF-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$3.4425 / $4.3732 | Buy Now |
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DISTI #
78-SIHP33N60EF-GE3
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Mouser Electronics | MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant | 783 |
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$3.1800 / $4.3100 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$3.0900 / $3.5900 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.098 Ohm 155 nC 278 W Silicon Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 22 Weeks Container: Tube | 0Tube |
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$3.0900 / $3.5900 | Buy Now |
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DISTI #
SIHP33N60EF-GE3
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TTI | MOSFET 600V Vds 30V Vgs TO-220AB RoHS: Compliant pbFree: Pb-Free Min Qty: 100 Package Multiple: 100 Container: Tube |
Americas - 1000 In Stock |
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$3.1500 | Buy Now |
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DISTI #
SIHP33N60EF-GE3
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TME | Transistor: N-MOSFET, unipolar, 600V, 21A, Idm: 100A, 278W, TO220AB Min Qty: 1 | 0 |
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$5.3800 / $8.0600 | RFQ |
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DISTI #
SIHP33N60EF-GE3
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EBV Elektronik | MOS Power Transistors HV (>= 200V) (Alt: SIHP33N60EF-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHP33N60EF-GE3
SIHP33N60EF-GE3 CAD Models
SIHP33N60EF-GE3 Part Data Attributes
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SIHP33N60EF-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHP33N60EF-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 33A I(D), 600V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 691 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.098 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHP33N60EF-GE3
This table gives cross-reference parts and alternative options found for SIHP33N60EF-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP33N60EF-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPL60R065C7 | Power Field-Effect Transistor, 29A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4 | Infineon Technologies AG | SIHP33N60EF-GE3 vs IPL60R065C7 |
| SIHG33N65EF-GE3 | Power Field-Effect Transistor, 31.6A I(D), 650V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SIHP33N60EF-GE3 vs SIHG33N65EF-GE3 |
| IPB60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | SIHP33N60EF-GE3 vs IPB60R099CPA |
| IPP60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SIHP33N60EF-GE3 vs IPP60R099CPA |
| STB37N60DM2AG | Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a D2PAK package | STMicroelectronics | SIHP33N60EF-GE3 vs STB37N60DM2AG |
| SIHB33N60E-E3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SIHP33N60EF-GE3 vs SIHB33N60E-E3 |
| STW37N60DM2AG | Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package | STMicroelectronics | SIHP33N60EF-GE3 vs STW37N60DM2AG |
| IPW60R099CPFKSA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | SIHP33N60EF-GE3 vs IPW60R099CPFKSA1 |
| SIHB33N60ET1-GE3 | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | Vishay Intertechnologies | SIHP33N60EF-GE3 vs SIHB33N60ET1-GE3 |
| TK25V60X | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SIHP33N60EF-GE3 vs TK25V60X |