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Transistors / Power Field-Effect Transistors / SIJ470DP-T1-GE3
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SIJ470DP-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SIJ470DP-T1-GE3 by Vishay Intertechnologies

Overview of SIJ470DP-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SIJ470DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 96X2690
Newark N-Channel 100-V (D-S) Mosfet |Vishay SIJ470DP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.6020
$0.6020 Buy Now
DISTI # SIJ470DP-T1-GE3
Avnet Americas N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIJ470DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.5767
$0.5767 Buy Now
DISTI # 78-SIJ470DP-T1-GE3
Mouser Electronics MOSFETs 100V 9.1mOhm@10V 58.8A N-CH RoHS: Compliant 10620
  • 1 $1.5600
  • 10 $1.2900
  • 100 $0.9960
  • 500 $0.8450
  • 1,000 $0.6890
  • 3,000 $0.6180
  • 6,000 $0.5990
  • 9,000 $0.5880
$0.5880 / $1.5600 Buy Now
Future Electronics N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
Reel
  • 3,000 $0.6100
  • 6,000 $0.5900
$0.5900 / $0.6100 Buy Now
Future Electronics N-Channel 100 V 9.1 mOhm 56.8 W SMT ThunderFET Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 26 Weeks Container: Reel 0
Reel
  • 3,000 $0.6100
  • 6,000 $0.5900
$0.5900 / $0.6100 Buy Now
DISTI # 82705636
Verical Trans MOSFET N-CH 100V 58.8A 5-Pin(4+Tab) PowerPAK SO T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2424 Americas - 3000
  • 3,000 $1.0085
$1.0085 Buy Now
DISTI # SIJ470DP-T1-GE3
TTI MOSFETs 100V 9.1mOhm@10V 58.8A N-CH RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 18000
In Stock
  • 3,000 $0.6150
  • 6,000 $0.6000
  • 9,000 $0.5880
$0.5880 / $0.6150 Buy Now
DISTI # SIJ470DP-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 58.8A, Idm: 150A Min Qty: 3000 0
  • 3,000 $0.6800
$0.6800 RFQ
DISTI # SIJ470DP-T1-GE3
EBV Elektronik (Alt: SIJ470DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIJ470DP-T1-GE3

SIJ470DP-T1-GE3 Part Data Attributes

Parametric Data
SIJ470DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIJ470DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 80 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 58.8 A
Drain-source On Resistance-Max 0.0091 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 56.8 W
Pulsed Drain Current-Max (IDM) 150 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 50 ns

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