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Part Details for SIR470DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR470DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIR470DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97W2611
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Newark | Mosfet Transistor, N Channel, 60 A, 40 V, 0.0019 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Vishay SIR470DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 13643 |
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$1.5400 / $2.7400 | Buy Now |
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DISTI #
69W7167
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Newark | Mosfet, N Channel, 40V, 60A, Powerpak So-8, Transistor Polarity:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:60A, On Resistance Rds(On):0.0019Ohm, Transistor Mounting:Surface Mount, Threshold Voltage Vgs:1V Rohs Compliant: Yes |Vishay SIR470DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.7600 | Buy Now |
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DISTI #
16P3655
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Newark | N Channel Mosfet, 40V, 60A, Soic, Full Reel, Transistor Polarity:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:60A, On Resistance Rds(On):0.0019Ohm, Transistor Mounting:Surface Mount, Threshold Voltage Vgs:2.5Vrohs Compliant: Yes |Vishay SIR470DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1900 / $1.2300 | Buy Now |
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DISTI #
SIR470DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR470DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 6000 |
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$0.8370 / $1.0633 | Buy Now |
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DISTI #
SIR470DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR470DP-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.8370 / $1.0354 | Buy Now |
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DISTI #
781-SIR470DP-T1-GE3
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Mouser Electronics | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 48598 |
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$1.1100 / $2.6000 | Buy Now |
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Future Electronics | Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$1.0000 | Buy Now |
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Future Electronics | Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.0000 | Buy Now |
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Bristol Electronics | 21000 |
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RFQ | ||
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Bristol Electronics | 1428 |
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RFQ |
Part Details for SIR470DP-T1-GE3
SIR470DP-T1-GE3 CAD Models
SIR470DP-T1-GE3 Part Data Attributes
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SIR470DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR470DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal Semiconductor FET, POWERPAK SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | POWERPAK SO-8 | |
| Reach Compliance Code | not_compliant | |
| Factory Lead Time | 6 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.00265 Ω | |
| FET Technology | METAL SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 104 W | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 225 ns | |
| Turn-on Time-Max (ton) | 135 ns |
Alternate Parts for SIR470DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR470DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR470DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIR814DP-T1-GE3 | TRANSISTOR 60 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power | Vishay Siliconix | SIR470DP-T1-GE3 vs SIR814DP-T1-GE3 |