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Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR470DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 40V 60A PPAK SO-8 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8278 In Stock |
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$1.1764 / $2.7100 | Buy Now |
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ES Components | SIL SIR470DP-T1-GE3 40V MOSFT 3K/RL | 0 in Stock |
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RFQ | |
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New Advantage Corporation | Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 12000 |
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$1.0400 / $1.1100 | Buy Now |
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SIR470DP-T1-GE3
Vishay Siliconix
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Datasheet
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Compare Parts:
SIR470DP-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.00265 Ω | |
FET Technology | METAL SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 104 W | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 225 ns | |
Turn-on Time-Max (ton) | 135 ns |
This table gives cross-reference parts and alternative options found for SIR470DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR470DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SIR814DP-T1-GE3 | TRANSISTOR 60 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power | Vishay Siliconix | SIR470DP-T1-GE3 vs SIR814DP-T1-GE3 |