Datasheets
SIR470DP-T1-GE3 by:

Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R

Part Details for SIR470DP-T1-GE3 by Vishay Siliconix

Overview of SIR470DP-T1-GE3 by Vishay Siliconix

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Price & Stock for SIR470DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIR470DP-T1-GE3CT-ND
DigiKey MOSFET N-CH 40V 60A PPAK SO-8 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 8278
In Stock
  • 1 $2.7100
  • 10 $2.2520
  • 100 $1.7922
  • 500 $1.5165
  • 1,000 $1.2867
  • 3,000 $1.2224
  • 6,000 $1.1764
$1.1764 / $2.7100 Buy Now
ES Components SIL SIR470DP-T1-GE3 40V MOSFT 3K/RL 0 in Stock
RFQ
New Advantage Corporation Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 12000
  • 3,000 $1.1100
  • 12,000 $1.0400
$1.0400 / $1.1100 Buy Now

Part Details for SIR470DP-T1-GE3

SIR470DP-T1-GE3 CAD Models

SIR470DP-T1-GE3 Part Data Attributes

SIR470DP-T1-GE3 Vishay Siliconix
Buy Now Datasheet
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SIR470DP-T1-GE3 Vishay Siliconix Trans MOSFET N-CH 40V 38.8A 8-Pin PowerPAK SO T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.00265 Ω
FET Technology METAL SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 104 W
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 225 ns
Turn-on Time-Max (ton) 135 ns

Alternate Parts for SIR470DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR470DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR470DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIR814DP-T1-GE3 TRANSISTOR 60 A, 40 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SIR470DP-T1-GE3 vs SIR814DP-T1-GE3

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