Part Details for SIR580DP-T1-RE3 by Vishay Intertechnologies
Overview of SIR580DP-T1-RE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for SIR580DP-T1-RE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
50AJ6060
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Newark | Mosfet, N-Ch, 80V, 146A, 150Deg C, 104W Rohs Compliant: Yes |Vishay SIR580DP-T1-RE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1979 |
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$1.3000 / $2.0400 | Buy Now |
|
DISTI #
SIR580DP-T1-RE3
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Avnet Americas | Transistor MOSFET N-CH 80V 146A 8-Pin PowerPAK SO - Tape and Reel (Alt: SIR580DP-T1-RE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
|
$1.1044 | Buy Now |
|
DISTI #
78-SIR580DP-T1-RE3
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Mouser Electronics | MOSFET N-CHANNEL 80-V (D-S) RoHS: Compliant | 2743 |
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$0.7610 / $1.8500 | Buy Now |
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Future Electronics | N Channel 80 V 35.8 A 2.7 mOhm Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks Container: Reel | 0Reel |
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$0.7650 | Buy Now |
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Bristol Electronics | 2659 |
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RFQ | ||
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DISTI #
SIR580DP-T1-RE3
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TTI | MOSFET N-CHANNEL 80-V (D-S) RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.7600 / $0.7800 | Buy Now |
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DISTI #
SIR580DP-T1-RE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 146A, Idm: 300A Min Qty: 1 | 0 |
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$1.0700 / $1.7200 | RFQ |
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DISTI #
SIR580DP-T1-RE3
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EBV Elektronik | Transistor MOSFET N-CH 80V 146A 8-Pin PowerPAK SO (Alt: SIR580DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 33 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR580DP-T1-RE3
SIR580DP-T1-RE3 CAD Models
SIR580DP-T1-RE3 Part Data Attributes
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|
SIR580DP-T1-RE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR580DP-T1-RE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Date Of Intro | 2020-09-08 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 146 A | |
| Drain-source On Resistance-Max | 0.0032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 12 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 72 ns | |
| Turn-on Time-Max (ton) | 52 ns |