Part Details for SIR606DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR606DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SIR606DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
20AC3885
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Newark | N-Channel 100-V (D-S) Mosfet |Vishay SIR606DP-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5880 / $0.6010 | Buy Now |
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DISTI #
SIR606DP-T1-GE3
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Avnet Americas | MOSFET N-Channel 100V 37A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR606DP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
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$0.5960 / $0.7572 | Buy Now |
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DISTI #
78-SIR606DP-T1-GE3
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Mouser Electronics | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 11491 |
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$0.5520 / $1.1900 | Buy Now |
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DISTI #
V72:2272_17580893
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Arrow Electronics | Trans MOSFET N-CH 100V 37A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 44 Weeks Date Code: 2303 Container: Cut Strips | Americas - 1860 |
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$0.5926 / $0.6831 | Buy Now |
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Future Electronics | N-Channel 100 V 16.2 mOhm 44.5 W TrenchFET Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5500 / $0.5700 | Buy Now |
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Future Electronics | N-Channel 100 V 16.2 mOhm 44.5 W TrenchFET Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks Container: Reel | 0Reel |
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$0.5500 / $0.5700 | Buy Now |
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DISTI #
66716055
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Verical | Trans MOSFET N-CH 100V 37A 8-Pin PowerPAK SO EP T/R RoHS: Compliant Min Qty: 10 Package Multiple: 1 Date Code: 2303 | Americas - 1860 |
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$0.5926 / $0.6507 | Buy Now |
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DISTI #
SIR606DP-T1-GE3
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TTI | MOSFET 100V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.5450 / $0.5860 | Buy Now |
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DISTI #
SIR606DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 37A, Idm: 100A Min Qty: 3000 | 0 |
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$0.9500 | RFQ |
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DISTI #
SIR606DP-T1-GE3
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EBV Elektronik | MOSFET N-Channel 100V 37A 8-Pin PowerPAK SO T/R (Alt: SIR606DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 33 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR606DP-T1-GE3
SIR606DP-T1-GE3 CAD Models
SIR606DP-T1-GE3 Part Data Attributes
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SIR606DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR606DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Date Of Intro | 2016-05-02 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.0162 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 29 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 44.5 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 56 ns | |
| Turn-on Time-Max (ton) | 56 ns |