Part Details for SIR670DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR670DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIR670DP-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR670DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 60V 24A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR670DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$0.4921 / $0.6251 | Buy Now |
DISTI #
78-SIR670DP-T1-GE3
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Mouser Electronics | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 0 |
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$0.5020 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 | 0 |
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$0.4860 | Buy Now |
DISTI #
SIR670DP-T1-GE3
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TTI | MOSFET 60V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4570 / $0.4790 | Buy Now |
DISTI #
SIR670DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 60V, 60A, Idm: 200A Min Qty: 3000 | 0 |
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$0.7900 | RFQ |
DISTI #
SIR670DP-T1-GE3
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EBV Elektronik | Trans MOSFET N-CH 60V 24A 8-Pin PowerPAK SO T/R (Alt: SIR670DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 39 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR670DP-T1-GE3
SIR670DP-T1-GE3 CAD Models
SIR670DP-T1-GE3 Part Data Attributes:
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SIR670DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR670DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SOP-8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 38 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 31.2 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0048 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Surface Mount | YES | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIR670DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR670DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR670DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIR662DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR670DP-T1-GE3 vs SIR662DP-T1-GE3 |