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Part Details for SIR818DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR818DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Security and Surveillance
Internet of Things (IoT)
Space Technology
Audio and Video Systems
Transportation and Logistics
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Communication and Networking
Entertainment and Gaming
Robotics and Drones
Price & Stock for SIR818DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR818DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR818DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.5198 / $0.6603 | Buy Now |
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DISTI #
78-SIR818DP-T1-GE3
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Mouser Electronics | MOSFET 30 Volts 50 Amps 69 Watts RoHS: Compliant | 8908 |
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$0.4820 / $1.1100 | Buy Now |
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DISTI #
V72:2272_09216020
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Arrow Electronics | Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2348 Container: Cut Strips | Americas - 3000 |
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$0.4938 / $0.8014 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.4750 / $0.4950 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4750 / $0.4950 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.0028 Ohm 69 W Surface Mount Power Mosfet - PowerPAK-SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.5300 / $0.7100 | Buy Now |
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DISTI #
SIR818DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 50A, Idm: 80A, 69W Min Qty: 3000 | 0 |
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$0.8000 | RFQ |
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DISTI #
SIR818DP-T1-GE3
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EBV Elektronik | Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO T/R (Alt: SIR818DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR818DP-T1-GE3
SIR818DP-T1-GE3 CAD Models
SIR818DP-T1-GE3 Part Data Attributes
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SIR818DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR818DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |