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Power Field-Effect Transistor, 50A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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SIR818DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR818DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR818DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.4528 / $0.4813 | Buy Now |
DISTI #
SIR818DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 50A, Idm: 80A, 69W Min Qty: 3000 | 0 |
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$0.7700 | RFQ |
DISTI #
C1S806001123942
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Chip One Stop | Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO EP T/R RoHS: Compliant pbFree: Yes Container: Cut Tape | 2798 |
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$0.4510 / $1.5700 | Buy Now |
DISTI #
SIR818DP-T1-GE3
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EBV Elektronik | Trans MOSFET NCH 30V 32A 8Pin PowerPAK SO TR (Alt: SIR818DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SIR818DP-T1-GE3
Vishay Intertechnologies
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Datasheet
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SIR818DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |