Datasheets
SIR818DP-T1-GE3 by:

Power Field-Effect Transistor, 50A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SIR818DP-T1-GE3 by Vishay Intertechnologies

Results Overview of SIR818DP-T1-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Security and Surveillance Internet of Things (IoT) Space Technology Audio and Video Systems Transportation and Logistics Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Communication and Networking Entertainment and Gaming Robotics and Drones

SIR818DP-T1-GE3 Information

SIR818DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIR818DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIR818DP-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR818DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4813
  • 6,000 $0.4736
  • 12,000 $0.4658
  • 18,000 $0.4582
  • 24,000 $0.4528
$0.4528 / $0.4813 Buy Now
DISTI # SIR818DP-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 50A, Idm: 80A, 69W Min Qty: 3000 0
  • 3,000 $0.7700
$0.7700 RFQ
DISTI # C1S806001123942
Chip One Stop Trans MOSFET N-CH 30V 32A 8-Pin PowerPAK SO EP T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 2798
  • 1 $1.5700
  • 10 $0.4620
  • 50 $0.4610
  • 100 $0.4600
  • 200 $0.4520
  • 1,000 $0.4510
$0.4510 / $1.5700 Buy Now
DISTI # SIR818DP-T1-GE3
EBV Elektronik Trans MOSFET NCH 30V 32A 8Pin PowerPAK SO TR (Alt: SIR818DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIR818DP-T1-GE3

SIR818DP-T1-GE3 CAD Models

SIR818DP-T1-GE3 Part Data Attributes

SIR818DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR818DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 50A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 125 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5
JESD-609 Code e3
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 69 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

SIR818DP-T1-GE3 Related Parts

SIR818DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended storage condition for the SIR818DP-T1-GE3 is in a dry, cool place with a temperature range of -40°C to 125°C and humidity below 60%.

  • Yes, the SIR818DP-T1-GE3 is suitable for high-reliability applications due to its high-quality materials, robust design, and rigorous testing procedures.

  • Handle the SIR818DP-T1-GE3 by the body, avoiding touching the leads or electrical contacts to prevent damage from electrostatic discharge (ESD) or contamination.

  • The recommended soldering profile for the SIR818DP-T1-GE3 is a peak temperature of 260°C for 10-15 seconds, with a ramp-up rate of 3°C/second and a ramp-down rate of 6°C/second.

  • Yes, the SIR818DP-T1-GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.

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