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N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIR818DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 50A PPAK SO-8 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2434 In Stock |
|
$0.4813 / $1.8700 | Buy Now |
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SIR818DP-T1-GE3
Vishay Siliconix
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Datasheet
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SIR818DP-T1-GE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
|
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 69 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIR818DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR818DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SM3412NHQGC-TRG | Power Field-Effect Transistor, 50A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DFN3.3X3.3B-8_EP, 8 PIN | Sinopower Semiconductor Inc | SIR818DP-T1-GE3 vs SM3412NHQGC-TRG |