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Power Field-Effect Transistor, 60A I(D), 80V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19X1950
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Newark | Mosfet Transistor, N Channel, 60 A, 80 V, 0.0046 Ohm, 10 V, 1.2 V Rohs Compliant: Yes |Vishay SIR826ADP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.8400 / $2.5400 | Buy Now |
DISTI #
99W9567
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Newark | Mosfet Transistor, N Channel, 60 A, 80 V, 0.0046 Ohm, 10 V, 1.2 V |Vishay SIR826ADP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.0500 / $1.2600 | Buy Now |
DISTI #
SIR826ADP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 80V 23.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR826ADP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
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$1.1070 / $1.4063 | Buy Now |
DISTI #
78-SIR826ADP-T1-GE3
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Mouser Electronics | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 0 |
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$1.3700 / $2.4700 | Order Now |
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Future Electronics | Single N-Channel 80 V 5.5 mOhm 86 nC 104 W SMT Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.1200 | Buy Now |
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Future Electronics | Single N-Channel 80 V 5.5 mOhm 86 nC 104 W SMT Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.1200 | Buy Now |
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Future Electronics | Single N-Channel 80 V 5.5 mOhm 86 nC 104 W SMT Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.1200 | Buy Now |
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Future Electronics | Single N-Channel 80 V 5.5 mOhm 86 nC 104 W SMT Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$1.1200 | Buy Now |
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Bristol Electronics | 699 |
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RFQ | ||
DISTI #
SIR826ADP-T1-GE3
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TTI | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$1.2800 | Buy Now |
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SIR826ADP-T1-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SIR826ADP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 80V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | SOT | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 38 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 61 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0059 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |