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Power Field-Effect Transistor, 60A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SIR826DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T2658
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Newark | Mosfet, N Ch, 80V, 60A, Powerpak So-8, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Vishay SIR826DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.7700 | Buy Now |
DISTI #
65T1668
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Newark | Mosfet, N Channel, 80V, 60A, Powerpak So-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:104W Rohs Compliant: Yes |Vishay SIR826DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.2200 / $1.4600 | Buy Now |
DISTI #
SIR826DP-T1-GE3
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Avnet Americas | N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days Container: Reel | 0 |
|
$1.1177 / $1.2303 | Buy Now |
DISTI #
SIR826DP-T1-GE3
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EBV Elektronik | NCHANNEL 80V DS MOSFET (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 30 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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SIR826DP-T1-GE3
Vishay Intertechnologies
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Datasheet
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SIR826DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 60A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 61 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 60 A | |
Drain-source On Resistance-Max | 0.0052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |