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Transistors / Power Field-Effect Transistors / SIR826DP-T1-GE3
Datasheets
SIR826DP-T1-GE3 by:

Power Field-Effect Transistor, 60A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

Part Details for SIR826DP-T1-GE3 by Vishay Intertechnologies

Results Overview of SIR826DP-T1-GE3 by Vishay Intertechnologies

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SIR826DP-T1-GE3 Information

SIR826DP-T1-GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SIR826DP-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 65T1668
Newark Mosfet, N Channel, 80V, 60A, Powerpak So-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:104W Rohs Compliant: Yes |Vishay SIR826DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $1.4600
  • 4,000 $1.3200
  • 6,000 $1.2700
  • 10,000 $1.2200
$1.2200 / $1.4600 Buy Now
DISTI # 94T2658
Newark Mosfet, N Ch, 80V, 60A, Powerpak So-8, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Vishay SIR826DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1,000 $1.7700
$1.7700 Buy Now
DISTI # SIR826DP-T1-GE3
Avnet Americas N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.1875
  • 6,000 $1.1685
  • 12,000 $1.1501
  • 18,000 $1.1309
  • 24,000 $1.1177
$1.1177 / $1.1875 Buy Now
DISTI # SIR826DP-T1-GE3
EBV Elektronik NCHANNEL 80V DS MOSFET (Alt: SIR826DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 29 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIR826DP-T1-GE3

SIR826DP-T1-GE3 CAD Models

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SIR826DP-T1-GE3 Part Data Attributes

Parametric Data
SIR826DP-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR826DP-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 60A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 61 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0052 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIR826DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR826DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR826DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
SIR826DP-T1-GE3 Vishay Siliconix Check for Price Power Field-Effect Transistor, 60A I(D), 80V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 SIR826DP-T1-GE3 vs SIR826DP-T1-GE3

SIR826DP-T1-GE3 Related Parts

SIR826DP-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SIR826DP-T1-GE3 is a pad size of 2.5 mm x 2.5 mm with a 1.5 mm x 1.5 mm thermal pad. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.

  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C. Apply a small amount of solder paste to the PCB pads, and then place the component. Use a reflow oven or a hot air gun to solder the component. Avoid overheating, as it can damage the component.

  • The maximum operating temperature range for the SIR826DP-T1-GE3 is -55°C to 150°C. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.

  • The SIR826DP-T1-GE3 is not hermetically sealed, so it's not recommended for use in high-humidity environments. If you must use the component in a humid environment, ensure proper conformal coating and follow the recommended storage and handling procedures to minimize moisture absorption.

  • Store the SIR826DP-T1-GE3 in its original packaging or in a dry, cool place. Avoid exposing the component to direct sunlight, moisture, or extreme temperatures. Handle the component by the body, avoiding touching the leads or electrical contacts to prevent damage or contamination.

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