Datasheets
SIR826LDP-T1-RE3 by:

Power Field-Effect Transistor,

Part Details for SIR826LDP-T1-RE3 by Vishay Intertechnologies

Overview of SIR826LDP-T1-RE3 by Vishay Intertechnologies

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Price & Stock for SIR826LDP-T1-RE3

Part # Distributor Description Stock Price Buy
DISTI # 93AH0390
Newark Mosfet, N-Ch, 80V, 86A, Powerpak So Rohs Compliant: Yes |Vishay SIR826LDP-T1-RE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 7378
  • 1 $1.7500
  • 10 $1.4700
  • 25 $1.3600
  • 50 $1.2600
  • 100 $1.1600
$1.1600 / $1.7500 Buy Now
DISTI # 86AK6241
Newark Mosfet, N-Ch, 80V, 86A, Powerpak So Rohs Compliant: Yes |Vishay SIR826LDP-T1-RE3 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.7820
  • 6,000 $0.7650
  • 12,000 $0.7360
$0.7360 / $0.7820 Buy Now
DISTI # SIR826LDP-T1-RE3
Avnet Americas Transistor MOSFET N-CH 80V 86A 8-Pin PowerPAK SO (Alt: SIR826LDP-T1-RE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days 0
  • 6,000 $0.8520
$0.8520 Buy Now
DISTI # 78-SIR826LDP-T1-RE3
Mouser Electronics MOSFET 80V N-CHANNEL (D-S) RoHS: Compliant 93704
  • 1 $1.5600
  • 10 $1.2800
  • 100 $0.9970
  • 500 $0.8450
  • 1,000 $0.6880
  • 3,000 $0.6140
  • 6,000 $0.5980
  • 9,000 $0.5880
$0.5880 / $1.5600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 0
  • 6,000 $0.6270
$0.6270 Buy Now
DISTI # SIR826LDP-T1-RE3
TTI MOSFET 80V N-CHANNEL (D-S) pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 6000
In Stock
  • 3,000 $0.5810
  • 6,000 $0.5700
  • 9,000 $0.5590
$0.5590 / $0.5810 Buy Now
DISTI # SIR826LDP-T1-RE3
Avnet Americas Transistor MOSFET N-CH 80V 86A 8-Pin PowerPAK SO (Alt: SIR826LDP-T1-RE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days 0
  • 6,000 $0.8520
$0.8520 Buy Now
DISTI # SIR826LDP-T1-RE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 86A, Idm: 200A, 83W Min Qty: 3000 0
  • 3,000 $0.8700
$0.8700 RFQ
DISTI # SIR826LDP-T1-RE3
EBV Elektronik Transistor MOSFET N-CH 80V 86A 8-Pin PowerPAK SO (Alt: SIR826LDP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 3586064RL
element14 Asia-Pacific MOSFET, N-CH, 80V, 86A, POWERPAK SO RoHS: Compliant Min Qty: 100 Container: Reel 7378
  • 100 $1.0595
  • 500 $0.7291
  • 1,500 $0.7150
$0.7150 / $1.0595 Buy Now
DISTI # 3586064
element14 Asia-Pacific MOSFET, N-CH, 80V, 86A, POWERPAK SO RoHS: Compliant Min Qty: 5 Container: Cut Tape 7378
  • 5 $1.3633
  • 50 $1.2151
  • 100 $1.0595
  • 500 $0.7291
  • 1,500 $0.7150
$0.7150 / $1.3633 Buy Now
DISTI # 3586064RL
Farnell MOSFET, N-CH, 80V, 86A, POWERPAK SO RoHS: Compliant Min Qty: 100 Lead time: 27 Weeks, 1 Days Container: Reel 7378
  • 100 $1.1120
  • 500 $0.7670
  • 1,500 $0.7518
$0.7518 / $1.1120 Buy Now
DISTI # 3586064
Farnell MOSFET, N-CH, 80V, 86A, POWERPAK SO RoHS: Compliant Min Qty: 5 Lead time: 27 Weeks, 1 Days Container: Cut Tape 7378
  • 5 $1.5113
  • 50 $1.3098
  • 100 $1.1120
  • 500 $0.7670
  • 1,500 $0.7518
$0.7518 / $1.5113 Buy Now
DISTI # 4320328
Farnell MOSFET, N-CH, 80V, 86A, POWERPAK SO RoHS: Compliant Min Qty: 3000 Lead time: 46 Weeks, 1 Days Container: Reel 0
  • 3,000 $0.7367
  • 9,000 $0.6448
$0.6448 / $0.7367 Buy Now

Part Details for SIR826LDP-T1-RE3

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SIR826LDP-T1-RE3 Part Data Attributes:

SIR826LDP-T1-RE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIR826LDP-T1-RE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks
Date Of Intro 2020-04-28
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 86 A
Drain-source On Resistance-Max 0.0062 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15.5 pF
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 200 A
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 86 ns
Turn-on Time-Max (ton) 40 ns

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