Part Details for SIR890DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR890DP-T1-GE3 by Vishay Intertechnologies
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SIR890DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
87AJ8429
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Newark | Mosfet N So-8 |Vishay SIR890DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.7200 / $2.8200 | Buy Now |
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Ameya Holding Limited | Single N-Channel 20 V 0.0029 Ohms Surface Mount Power Mosfet - SOIC-8 | 1999 |
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RFQ | |
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DISTI #
VISHAY SIR890DP-T1-GE3
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PEI Genesis | Power Field-Effect Transistor | 0 |
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Buy Now | |
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DISTI #
1684063
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Farnell | MOSFET, N, SO-8 RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.7074 | Buy Now |
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DISTI #
1684063RL
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Farnell | MOSFET, N, SO-8 RoHS: Compliant Min Qty: 1 Lead time: 3 Weeks, 1 Days Container: Reel | 0 |
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$0.7074 | Buy Now |
Part Details for SIR890DP-T1-GE3
SIR890DP-T1-GE3 CAD Models
SIR890DP-T1-GE3 Part Data Attributes
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SIR890DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR890DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |