Part Details for SIRA00DP-T1-GE3 by Vishay Intertechnologies
Overview of SIRA00DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Space Technology
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIRA00DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
05W5775
|
Newark | Mosfet, 30V, 60A, Ppakso-8, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:30V, On Resistance Rds(On):830Μohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.1V, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SIRA00DP-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2914 |
|
$1.3400 / $2.1800 | Buy Now |
|
DISTI #
99W9548
|
Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIRA00DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.9020 / $1.0800 | Buy Now |
|
DISTI #
70AC6478
|
Newark | Mosfet, N-Ch, 30V, 100A, 150Deg C, 104W, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:100A, On Resistance Rds(On):830Μohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay SIRA00DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.4300 | Buy Now |
|
DISTI #
SIRA00DP-T1-GE3
|
Avnet Americas | Trans MOSFET N-CH 30V 58A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA00DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.9507 / $1.2077 | Buy Now |
|
DISTI #
78-SIRA00DP-T1-GE3
|
Mouser Electronics | MOSFET 30V 1mOhm@10V 60A N-Ch G-IV RoHS: Compliant | 4757 |
|
$0.8800 / $2.1000 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 4 mOhm SMT TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.9000 | Buy Now |
|
|
Future Electronics | Single N-Channel 30 V 4 mOhm SMT TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.9000 | Buy Now |
|
|
Bristol Electronics | 950 |
|
RFQ | ||
|
|
Bristol Electronics | 3000 |
|
RFQ | ||
|
|
Quest Components | 1160 |
|
$0.7700 / $2.8000 | Buy Now |
Part Details for SIRA00DP-T1-GE3
SIRA00DP-T1-GE3 CAD Models
SIRA00DP-T1-GE3 Part Data Attributes
|
|
SIRA00DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIRA00DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 100A I(D), 30V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | |
| Reach Compliance Code | not_compliant | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |