Part Details for SIRA00DP-T1-GE3 by Vishay Siliconix
Overview of SIRA00DP-T1-GE3 by Vishay Siliconix
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- Number of Functional Equivalents:
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Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Space Technology
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIRA00DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIRA00DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 100A PPAK SO-8 Min Qty: 1 Lead time: 17 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7539 In Stock |
|
$0.8802 / $2.1000 | Buy Now |
|
DISTI #
70243882
|
RS | Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 60A, 1mohm @ 10V, PowerPAK SO-8 | Siliconix / Vishay SIRA00DP-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$1.7900 / $2.1000 | RFQ |
Part Details for SIRA00DP-T1-GE3
SIRA00DP-T1-GE3 CAD Models
SIRA00DP-T1-GE3 Part Data Attributes
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SIRA00DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SIRA00DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A SO8 PWR PK
|
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | SMALL OUTLINE, R-PDSO-C5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |