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Part Details for SIRA50DP-T1-RE3 by Vishay Intertechnologies
Overview of SIRA50DP-T1-RE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SIRA50DP-T1-RE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
59AC7424
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Newark | N-Channel 40-V (D-S) Mosfet |Vishay SIRA50DP-T1-RE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6660 / $0.6920 | Buy Now |
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DISTI #
50AC9655
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Newark | Mosfet, N-Ch, 40V, 100A, Powerpak So, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:40V, On Resistance Rds(On):860Μohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Rohs Compliant: Yes |Vishay SIRA50DP-T1-RE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$1.2500 / $1.8300 | Buy Now |
|
DISTI #
SIRA50DP-T1-RE3
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Avnet Americas | TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin Po - Tape and Reel (Alt: SIRA50DP-T1-RE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
|
$0.7017 / $0.8915 | Buy Now |
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DISTI #
78-SIRA50DP-T1-RE3
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Mouser Electronics | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 811 |
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$0.7030 / $1.5900 | Buy Now |
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Future Electronics | TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-P RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 | 0 |
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$0.6940 | Buy Now |
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DISTI #
SIRA50DP-T1-RE3
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TTI | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
|
$0.6500 / $0.7030 | Buy Now |
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DISTI #
SIRA50DP-T1-RE3
|
Avnet Americas | TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin Po - Tape and Reel (Alt: SIRA50DP-T1-RE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel | 0 |
|
$0.7017 / $0.8915 | Buy Now |
|
DISTI #
SIRA50DP-T1-RE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 40V, 100A, Idm: 400A Min Qty: 1 | 0 |
|
$1.3100 / $1.9600 | RFQ |
|
DISTI #
SIRA50DP-T1-RE3
|
EBV Elektronik | TrenchFET Gen IV Power MOSFET N-Channel Single 40V VDS +20V -16V VGS 100A ID 8-Pin Po (Alt: SIRA50DP-T1-RE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 39 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIRA50DP-T1-RE3
SIRA50DP-T1-RE3 CAD Models
SIRA50DP-T1-RE3 Part Data Attributes:
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SIRA50DP-T1-RE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIRA50DP-T1-RE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 38 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 101 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 110 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 126 ns | |
| Turn-on Time-Max (ton) | 58 ns |