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Part Details for SIRA90ADP-T1-GE3 by Vishay Intertechnologies
Overview of SIRA90ADP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIRA90ADP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42AJ0480
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIRA90ADP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.6650 | Buy Now |
|
DISTI #
SIRA90ADP-T1-GE3
|
Avnet Americas | N-CHANNEL 30-V (D-S) MOSFET (Alt: SIRA90ADP-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 | 0 |
|
$0.4566 | Buy Now |
|
DISTI #
C1S803606446490
|
Chip1Stop | MOSFET RoHS: Compliant | 20 |
|
$0.0958 | Buy Now |
Part Details for SIRA90ADP-T1-GE3
SIRA90ADP-T1-GE3 CAD Models
SIRA90ADP-T1-GE3 Part Data Attributes
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SIRA90ADP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIRA90ADP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2020-10-01 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 334 A | |
| Drain-source On Resistance-Max | 0.00107 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 302 pF | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 350 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 120 ns | |
| Turn-on Time-Max (ton) | 60 ns |