Part Details for SIS438DN-T1-GE3 by Vishay Siliconix
Overview of SIS438DN-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
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Price & Stock for SIS438DN-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SIS438DN-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 20V 16A PPAK 1212-8 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
42687 In Stock |
|
$0.2687 / $1.2300 | Buy Now |
|
New Advantage Corporation | MOSFET N-CH 20V 16A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 6000 |
|
$0.3467 / $0.3714 | Buy Now |
Part Details for SIS438DN-T1-GE3
SIS438DN-T1-GE3 CAD Models
SIS438DN-T1-GE3 Part Data Attributes
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SIS438DN-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SIS438DN-T1-GE3
Vishay Siliconix
Trans MOSFET N-CH 20V 14.3A 8-Pin PowerPAK 1212 T/R
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Package Description | SMALL OUTLINE, S-XDSO-C5 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 11.25 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 14.3 A | |
Drain-source On Resistance-Max | 0.0095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-XDSO-C5 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 27.7 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |