-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for SIS443DN-T1-GE3 by Vishay Intertechnologies
Overview of SIS443DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Price & Stock for SIS443DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
70AC6483
|
Newark | Mosfet, P-Ch, -40V, -35A, 150Deg C, 52W, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Vishay SIS443DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 23208 |
|
$0.5120 | Buy Now |
|
DISTI #
99W9580
|
Newark | Mosfet Transistor, P Channel, -35 A, -40 V, 0.0097 Ohm, -10 V, -1 V |Vishay SIS443DN-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6120 / $0.8280 | Buy Now |
|
DISTI #
79AH6501
|
Newark | P-Ch Thin Powerpak1212 Bwl 40V 16Mohm@4.5V Rohs Compliant: Yes |Vishay SIS443DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6050 | Buy Now |
|
DISTI #
SIS443DN-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS443DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 21000 |
|
$0.5412 / $0.6050 | Buy Now |
|
DISTI #
70AC6483
|
Avnet Americas | Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 70AC6483) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Ammo Pack | 21994 Partner Stock |
|
$1.0100 / $1.5800 | Buy Now |
|
|
Bristol Electronics | 678 |
|
RFQ | ||
|
DISTI #
SIS443DN-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -40V, -35A, Idm: -80A, 33W Min Qty: 1 | 2913 |
|
$0.8600 / $1.9000 | Buy Now |
|
|
Chip 1 Exchange | INSTOCK | 7800 |
|
RFQ | |
|
DISTI #
SIS443DN-T1-GE3
|
Avnet Asia | Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R (Alt: SIS443DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days | 0 |
|
RFQ | |
|
|
CHIPMALL.COM LIMITED | 40V 13.3A 3.7W 0.0117@10V,15A 1V@250uA 1 Piece P-Channel PowerPAK1212-8 MOSFETs ROHS | 779 |
|
$0.8455 | Buy Now |
Part Details for SIS443DN-T1-GE3
SIS443DN-T1-GE3 CAD Models
SIS443DN-T1-GE3 Part Data Attributes
|
|
SIS443DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIS443DN-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.035A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 4 Days | |
| Samacsys Manufacturer | Vishay | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 0.035 A | |
| Drain-source On Resistance-Max | 0.0117 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |