Datasheets
SIS443DN-T1-GE3 by:

Small Signal Field-Effect Transistor, 0.035A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8

Part Details for SIS443DN-T1-GE3 by Vishay Intertechnologies

Results Overview of SIS443DN-T1-GE3 by Vishay Intertechnologies

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Applications Space Technology Environmental Monitoring Internet of Things (IoT) Smart Cities Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Automotive Consumer Electronics Education and Research Security and Surveillance Aerospace and Defense Healthcare Robotics and Drones

SIS443DN-T1-GE3 Information

SIS443DN-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

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Price & Stock for SIS443DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 79AH6501
Newark P-Ch Thin Powerpak1212 Bwl 40V 16Mohm@4.5V Rohs Compliant: Yes |Vishay SIS443DN-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 30000
  • 1 $0.5750
$0.5750 Buy Now
DISTI # 70AC6483
Newark Mosfet, P-Ch, -40V, -35A, 150Deg C, 52W, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.3V Rohs Compliant: Yes |Vishay SIS443DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 21994
  • 1 $0.5120
  • 10 $0.5120
  • 25 $0.5120
  • 50 $0.5120
  • 100 $0.5120
$0.5120 Buy Now
DISTI # 99W9580
Newark Mosfet Transistor, P Channel, -35 A, -40 V, 0.0097 Ohm, -10 V, -1 V |Vishay SIS443DN-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.8280
  • 1,000 $0.7960
  • 2,000 $0.7230
  • 4,000 $0.6490
  • 6,000 $0.6260
  • 10,000 $0.6120
$0.6120 / $0.8280 Buy Now
DISTI # SIS443DN-T1-GE3
Avnet Americas Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS443DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 27000
  • 3,000 $0.5750
  • 6,000 $0.5658
  • 12,000 $0.5569
  • 18,000 $0.5476
  • 24,000 $0.5412
$0.5412 / $0.5750 Buy Now
DISTI # 70AC6483
Avnet Americas Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 70AC6483) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Ammo Pack 21968 Partner Stock
  • 1 $1.8100
  • 10 $1.2900
  • 25 $1.1800
  • 50 $1.0600
  • 100 $0.9480
$0.9480 / $1.8100 Buy Now
Bristol Electronics   678
RFQ
DISTI # SIS443DN-T1-GE3
TME Transistor: P-MOSFET, unipolar, -40V, -35A, Idm: -80A, 33W Min Qty: 1 2913
  • 1 $1.8500
  • 10 $1.5800
  • 50 $1.3300
  • 100 $1.2100
  • 250 $1.0600
  • 500 $0.9500
  • 1,000 $0.8500
  • 3,000 $0.8400
$0.8400 / $1.8500 Buy Now
Chip 1 Exchange INSTOCK 7800
RFQ
DISTI # SIS443DN-T1-GE3
Avnet Asia Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R (Alt: SIS443DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days 0
RFQ
DISTI # SIS443DN-T1-GE3
EBV Elektronik Trans MOSFET P-CH 40V 13.3A 8-Pin PowerPAK 1212 T/R (Alt: SIS443DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 13.3A 3.7W 0.011710V15A 1 piece P-channel PowerPAK1212-8 MOSFETs ROHS 1520
  • 1 $0.9134
  • 10 $0.7512
  • 30 $0.6702
  • 100 $0.5875
  • 500 $0.5401
  • 1,000 $0.5141
$0.5141 / $0.9134 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 6862
  • 100 $0.7900
  • 250 $0.7500
  • 500 $0.7100
$0.7100 / $0.7900 Buy Now

Part Details for SIS443DN-T1-GE3

SIS443DN-T1-GE3 CAD Models

SIS443DN-T1-GE3 Part Data Attributes

SIS443DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIS443DN-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.035A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 4 Days
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 0.035 A
Drain-source On Resistance-Max 0.0117 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

SIS443DN-T1-GE3 Related Parts

SIS443DN-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended storage condition for SIS443DN-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.

  • Handle the SIS443DN-T1-GE3 with an anti-static wrist strap or mat, and ensure the workspace is ESD-protected. Avoid touching the component's pins or leads, and use ESD-safe tools and equipment.

  • The maximum allowable power dissipation for SIS443DN-T1-GE3 is 1.5 W, and it's essential to ensure the component is properly heat-sinked to prevent overheating.

  • While the SIS443DN-T1-GE3 is a high-quality component, it's essential to consult with Vishay Intertechnologies or a qualified representative to determine its suitability for high-reliability or aerospace applications, as additional testing and certification may be required.

  • The recommended soldering profile for SIS443DN-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds, and a preheat temperature of 150-200°C. Ensure the soldering process is in accordance with the IPC-J-STD-020 standard.

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