Part Details for SISA24DN-T1-GE3 by Vishay Intertechnologies
Overview of SISA24DN-T1-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Industrial Automation
Healthcare
Renewable Energy
Robotics and Drones
Price & Stock for SISA24DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
10AC9116
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Newark | Mosfet, N-Ch, 25V, 60A, Powerpak 1212, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.00115Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.1V, Power Rohs Compliant: Yes |Vishay SISA24DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 31221 |
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$0.6480 / $1.0400 | Buy Now |
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DISTI #
20AC3907
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Newark | N-Channel 25-V (D-S) Mosfet |Vishay SISA24DN-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3240 / $0.4220 | Buy Now |
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DISTI #
SISA24DN-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 25V 60A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISA24DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4443 | Buy Now |
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DISTI #
78-SISA24DN-T1-GE3
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Mouser Electronics | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. RoHS: Compliant | 11223 |
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$0.3060 / $0.9300 | Buy Now |
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Future Electronics | N-Channel 25 V 1.4 mOhm 52 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3100 / $0.3300 | Buy Now |
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Future Electronics | N-Channel 25 V 1.4 mOhm 52 W TrenchFET Gen IV Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.3100 / $0.3300 | Buy Now |
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Bristol Electronics | 6999 |
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RFQ | ||
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DISTI #
SISA24DN-T1-GE3
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TTI | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 6000 In Stock |
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$0.3060 / $0.3300 | Buy Now |
|
DISTI #
SISA24DN-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 25V 60A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISA24DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.4443 | Buy Now |
|
DISTI #
SISA24DN-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 25V, 60A, Idm: 150A, 33W Min Qty: 1 | 0 |
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$0.5010 / $0.7870 | RFQ |
Part Details for SISA24DN-T1-GE3
SISA24DN-T1-GE3 CAD Models
SISA24DN-T1-GE3 Part Data Attributes
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SISA24DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISA24DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 45 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 197 pF | |
| JESD-30 Code | S-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 52 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 56 ns | |
| Turn-on Time-Max (ton) | 70 ns |