Part Details for SISH107DN-T1-GE3 by Vishay Intertechnologies
Overview of SISH107DN-T1-GE3 by Vishay Intertechnologies
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Price & Stock for SISH107DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
68AK9908
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Newark | Mosfet, P-Ch, -30V, 34.4A, Powerpak 1212 Rohs Compliant: Yes |Vishay SISH107DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5970 |
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$0.5090 / $0.8150 | Buy Now |
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DISTI #
78-SISH107DN
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Mouser Electronics | MOSFET P-Channel 30 V (D-S) MOSFET PowerPAK 1212-8SH, 14 mohm a. 10V, 25.1 mohm a. 4.5V RoHS: Compliant | 11830 |
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$0.2470 / $0.7300 | Buy Now |
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DISTI #
4154264
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element14 Asia-Pacific | MOSFET, P-CH, -30V, 34.4A, POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape | 5970 |
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$0.2904 / $0.7264 | Buy Now |
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DISTI #
4154264RL
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element14 Asia-Pacific | MOSFET, P-CH, -30V, 34.4A, POWERPAK 1212 RoHS: Compliant Min Qty: 100 Container: Reel | 5970 |
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$0.2904 / $0.4441 | Buy Now |
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DISTI #
4154264
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Farnell | MOSFET, P-CH, -30V, 34.4A, POWERPAK 1212 RoHS: Compliant Min Qty: 1 Lead time: 39 Weeks, 1 Days Container: Cut Tape | 5970 |
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$0.2913 / $0.8388 | Buy Now |
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DISTI #
4154264RL
|
Farnell | MOSFET, P-CH, -30V, 34.4A, POWERPAK 1212 RoHS: Compliant Min Qty: 100 Lead time: 39 Weeks, 1 Days Container: Reel | 5970 |
|
$0.2913 / $0.4458 | Buy Now |
Part Details for SISH107DN-T1-GE3
SISH107DN-T1-GE3 CAD Models
SISH107DN-T1-GE3 Part Data Attributes
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SISH107DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISH107DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 34.4A I(D), 30V, 0.0251ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11.2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 34.4 A | |
| Drain-source On Resistance-Max | 0.0251 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 182 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 26.5 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 76 ns | |
| Turn-on Time-Max (ton) | 180 ns |