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Transistors / Power Field-Effect Transistors / SISH114ADN-T1-GE3
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SISH114ADN-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SISH114ADN-T1-GE3 by Vishay Intertechnologies

Overview of SISH114ADN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SISH114ADN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 99AC2829
Newark Mosfet, N-Ch, 30V, 35A, 150Deg C, 39W, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0062Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Vishay SISH114ADN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4601
  • 1 $0.6720
  • 10 $0.6030
  • 25 $0.5460
  • 50 $0.4880
  • 100 $0.4310
$0.4310 / $0.6720 Buy Now
DISTI # SISH114ADN-T1-GE3
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISH114ADN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.2394
$0.2394 Buy Now
DISTI # 78-SISH114ADN-T1-GE3
Mouser Electronics MOSFETs 30V Vds, +/-20V Vgs PowerPAK 1212-8SH RoHS: Compliant 10340
  • 1 $0.5800
  • 10 $0.5150
  • 100 $0.3560
  • 500 $0.3190
  • 1,000 $0.2920
  • 3,000 $0.2470
  • 6,000 $0.2450
  • 9,000 $0.2440
  • 24,000 $0.2430
$0.2430 / $0.5800 Buy Now
Future Electronics Single N-Channel 30 V 7.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel 0
Reel
  • 3,000 $0.2550
  • 6,000 $0.2500
  • 9,000 $0.2500
  • 12,000 $0.2450
  • 15,000 $0.2400
$0.2400 / $0.2550 Buy Now
DISTI # 62195002
Verical Trans MOSFET N-CH 30V 18A 8-Pin PowerPAK 1212-SH EP T/R Min Qty: 23 Package Multiple: 1 Date Code: 2141 Americas - 117
  • 23 $0.3842
  • 25 $0.3826
  • 100 $0.2618
$0.2618 / $0.3842 Buy Now
DISTI # SISH114ADN-T1-GE3
TTI MOSFETs 30V Vds, +/-20V Vgs PowerPAK 1212-8SH RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.2440
$0.2440 Buy Now
DISTI # SISH114ADN-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 35A, Idm: 60A, 25W Min Qty: 1 0
  • 1 $0.8000
  • 5 $0.6010
  • 25 $0.5400
  • 100 $0.4780
  • 500 $0.4290
$0.4290 / $0.8000 RFQ
DISTI # C1S803606008926
Chip1Stop MOSFET 117
  • 10 $0.3940
  • 25 $0.3320
  • 100 $0.3110
$0.3110 / $0.3940 Buy Now
DISTI # SISH114ADN-T1-GE3
EBV Elektronik Transistor MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R (Alt: SISH114ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SISH114ADN-T1-GE3

SISH114ADN-T1-GE3 CAD Models

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SISH114ADN-T1-GE3 Part Data Attributes

Parametric Data
SISH114ADN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SISH114ADN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks
Date Of Intro 2018-11-27
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 105 pF
JESD-30 Code S-PDSO-N8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 39 W
Pulsed Drain Current-Max (IDM) 60 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 51 ns

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