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Part Details for SISH402DN-T1-GE3 by Vishay Intertechnologies
Overview of SISH402DN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (23 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SISH402DN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
59AC7450
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SISH402DN-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.3630 / $0.3710 | Buy Now |
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DISTI #
81AC2795
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Newark | Mosfet, N-Ch, 30V, 35A, 150Deg C, 52W, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0048Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.2V, Power Rohs Compliant: Yes |Vishay SISH402DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.5910 / $0.8980 | Buy Now |
|
DISTI #
SISH402DN-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 - Tape and Reel (Alt: SISH402DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.4945 | Buy Now |
|
DISTI #
78-SISH402DN-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 6846 |
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$0.3900 / $0.8600 | Buy Now |
|
DISTI #
A03:0893_08381565
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Arrow Electronics | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks Date Code: 2306 | Asia - 12000 |
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$0.4918 | Buy Now |
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DISTI #
E02:0323_12762471
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Arrow Electronics | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R Min Qty: 6000 Package Multiple: 3000 Lead time: 63 Weeks Date Code: 2402 | Europe - 6000 |
|
$0.3532 / $0.3570 | Buy Now |
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DISTI #
V72:2272_21764876
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Arrow Electronics | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2303 Container: Cut Strips | Americas - 2208 |
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$0.3496 / $0.5484 | Buy Now |
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|
Future Electronics | N-Channel 30 V 0.006 Ohm 12 nC TrenchFET® Power Mosfet-PowerPAK 1212-8SH RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.3550 / $0.3700 | Buy Now |
|
DISTI #
67035343
|
Verical | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R Min Qty: 6000 Package Multiple: 3000 | Americas - 12000 |
|
$0.4918 | Buy Now |
|
DISTI #
76888003
|
Verical | Trans MOSFET N-CH 30V 35A 8-Pin PowerPAK 1212 T/R Min Qty: 3000 Package Multiple: 3000 Date Code: 2402 | Americas - 6000 |
|
$0.3527 / $0.3565 | Buy Now |
Part Details for SISH402DN-T1-GE3
SISH402DN-T1-GE3 CAD Models
SISH402DN-T1-GE3 Part Data Attributes:
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SISH402DN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISH402DN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 140 pF | |
| JESD-30 Code | S-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 52 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 55 ns | |
| Turn-on Time-Max (ton) | 35 ns |