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Transistors / Power Field-Effect Transistors / SISS32DN-T1-GE3
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SISS32DN-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SISS32DN-T1-GE3 by Vishay Intertechnologies

Overview of SISS32DN-T1-GE3 by Vishay Intertechnologies

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for SISS32DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 99AC9591
Newark Mosfet, N-Ch, 80V, 63A, 150Deg C, 65.7W, Transistor Polarity:N Channel, Continuous Drain Current Id:63A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.006Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.8V, Power Rohs Compliant: Yes |Vishay SISS32DN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.4000
  • 10 $1.1800
  • 25 $1.1000
  • 50 $1.0200
  • 100 $0.9360
$0.9360 / $1.4000 Buy Now
DISTI # 81AC3503
Newark N-Channel 80-V (D-S) Mosfet |Vishay SISS32DN-T1-GE3 Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.5100
  • 10,000 $0.4990
$0.4990 / $0.5100 Buy Now
DISTI # SISS32DN-T1-GE3
Avnet Americas N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SISS32DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.6801
$0.6801 Buy Now
DISTI # 78-SISS32DN-T1-GE3
Mouser Electronics MOSFET 80V Vds, 20V Vgs PowerPAK 1212-8S RoHS: Compliant 47253
  • 1 $1.2500
  • 10 $1.0300
  • 100 $0.7960
  • 500 $0.6750
  • 1,000 $0.5500
  • 3,000 $0.5160
  • 6,000 $0.4920
  • 9,000 $0.4700
$0.4700 / $1.2500 Buy Now
Future Electronics N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
Reel
  • 3,000 $0.4950
  • 6,000 $0.4850
  • 9,000 $0.4750
$0.4750 / $0.4950 Buy Now
Future Electronics N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.4950
  • 6,000 $0.4850
  • 9,000 $0.4750
$0.4750 / $0.4950 Buy Now
DISTI # SISS32DN-T1-GE3
TTI MOSFET 80V Vds, 20V Vgs PowerPAK 1212-8S RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 12000
In Stock
  • 3,000 $0.5110
  • 6,000 $0.4870
  • 9,000 $0.4650
$0.4650 / $0.5110 Buy Now
DISTI # SISS32DN-T1-GE3
Avnet Americas N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SISS32DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.6801
$0.6801 Buy Now
DISTI # SISS32DN-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 50.3A, Idm: 150A Min Qty: 1 0
  • 1 $1.1800
  • 5 $1.0600
  • 25 $0.9500
  • 100 $0.8500
  • 500 $0.7800
$0.7800 / $1.1800 RFQ
DISTI # SISS32DN-T1-GE3
Avnet Americas N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SISS32DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.6801
$0.6801 Buy Now
DISTI # 3019141RL
element14 Asia-Pacific MOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $0.8387
  • 500 $0.7099
  • 1,000 $0.6297
  • 5,000 $0.5495
$0.5495 / $0.8387 Buy Now
DISTI # 3019141
element14 Asia-Pacific MOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $1.3169
  • 10 $1.0814
  • 100 $0.8387
  • 500 $0.7099
  • 1,000 $0.6297
  • 5,000 $0.5495
$0.5495 / $1.3169 Buy Now
DISTI # 3019141
Farnell MOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W RoHS: Compliant Min Qty: 1 Lead time: 99 Weeks, 1 Days Container: Cut Tape 0
  • 1 $1.4319
  • 10 $1.1053
  • 100 $0.7988
  • 500 $0.6783
  • 1,000 $0.6192
  • 5,000 $0.5602
$0.5602 / $1.4319 Buy Now
DISTI # 3019141RL
Farnell MOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W RoHS: Compliant Min Qty: 100 Lead time: 99 Weeks, 1 Days Container: Reel 0
  • 100 $0.7988
  • 500 $0.6783
  • 1,000 $0.6192
  • 5,000 $0.5602
$0.5602 / $0.7988 Buy Now

Part Details for SISS32DN-T1-GE3

SISS32DN-T1-GE3 CAD Models

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SISS32DN-T1-GE3 Part Data Attributes

Parametric Data
SISS32DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SISS32DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks
Date Of Intro 2018-08-19
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 63 A
Drain-source On Resistance-Max 0.0087 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JESD-30 Code S-PDSO-N8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65.7 W
Pulsed Drain Current-Max (IDM) 150 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 42 ns

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