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Part Details for SISS32LDN-T1-GE3 by Vishay Intertechnologies
Overview of SISS32LDN-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings:
- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SISS32LDN-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42AH1978
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Newark | Mosfet, N-Ch, 80V, 63A, 150Deg C, 65.7W Rohs Compliant: Yes |Vishay SISS32LDN-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 20220 |
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$0.8640 / $1.3000 | Buy Now |
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DISTI #
SISS32LDN-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 80V 63A 8-Pin PowerPAK 1212 (Alt: SISS32LDN-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | 0 |
|
$0.6311 | Buy Now |
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DISTI #
78-SISS32LDN-T1-GE3
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Mouser Electronics | MOSFET N-CHANNEL 80V PowerPAK 1212-8S RoHS: Compliant | 1600 |
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$0.4350 / $1.1600 | Buy Now |
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Future Electronics | MOSFET RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4800 / $0.5000 | Buy Now |
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DISTI #
SISS32LDN-T1-GE3
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TTI | MOSFET N-CHANNEL 80V PowerPAK 1212-8S RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4310 / $0.4510 | Buy Now |
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DISTI #
SISS32LDN-T1-GE3
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Avnet Americas | Transistor MOSFET N-CH 80V 63A 8-Pin PowerPAK 1212 (Alt: SISS32LDN-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | 0 |
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$0.6311 | Buy Now |
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DISTI #
SISS32LDN-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 80V, 50.3A, Idm: 150A Min Qty: 1 | 0 |
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$0.7000 / $1.0400 | RFQ |
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DISTI #
SISS32LDN-T1-GE3
|
Avnet Americas | Transistor MOSFET N-CH 80V 63A 8-Pin PowerPAK 1212 (Alt: SISS32LDN-T1-GE3) RoHS: Not Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | 0 |
|
$0.6311 | Buy Now |
|
DISTI #
SISS32LDN-T1-GE3
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EBV Elektronik | Transistor MOSFET N-CH 80V 63A 8-Pin PowerPAK 1212 (Alt: SISS32LDN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 2 Weeks, 4 Days | EBV - 0 |
|
Buy Now | |
|
DISTI #
3280630
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element14 Asia-Pacific | MOSFET, N-CH, 80V, 63A, 150DEG C, 65.7W RoHS: Compliant Min Qty: 1 Container: Cut Tape | 20220 |
|
$0.4936 / $1.2212 | Buy Now |
Part Details for SISS32LDN-T1-GE3
SISS32LDN-T1-GE3 CAD Models
SISS32LDN-T1-GE3 Part Data Attributes
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SISS32LDN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SISS32LDN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 20 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 63 A | |
| Drain-source On Resistance-Max | 0.0072 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15.5 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65.7 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 72 ns | |
| Turn-on Time-Max (ton) | 166 ns |