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Transistors / Power Field-Effect Transistors / SISS67DN-T1-GE3
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SISS67DN-T1-GE3 by:

Power Field-Effect Transistor,

Part Details for SISS67DN-T1-GE3 by Vishay Intertechnologies

Overview of SISS67DN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SISS67DN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 81AC3506
Newark P-Channel 30-V (D-S) Mosfet |Vishay SISS67DN-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 6,000 $0.4320
  • 10,000 $0.4220
$0.4220 / $0.4320 Buy Now
DISTI # 78AC6533
Newark Mosfet, P-Ch, -30V, -60A, 150Deg C, Transistor Polarity:P Channel, Continuous Drain Current Id:-60A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.0046Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Power Rohs Compliant: Yes |Vishay SISS67DN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $1.2000
  • 10 $0.9890
  • 25 $0.9220
  • 50 $0.8560
  • 100 $0.7890
$0.7890 / $1.2000 Buy Now
DISTI # SISS67DN-T1-GE3
Avnet Americas P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SISS67DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.3996
$0.3996 Buy Now
DISTI # 78-SISS67DN-T1-GE3
Mouser Electronics MOSFETs -30V Vds 25V Vgs PowerPAK 1212-8S RoHS: Compliant 5264
  • 1 $1.0600
  • 10 $0.8650
  • 100 $0.6730
  • 500 $0.5710
  • 1,000 $0.4650
  • 3,000 $0.4370
  • 6,000 $0.4160
  • 9,000 $0.3970
$0.3970 / $1.0600 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 6000
Reel
  • 3,000 $0.4050
  • 6,000 $0.3950
  • 9,000 $0.3900
  • 12,000 $0.3850
$0.3850 / $0.4050 Buy Now
Future Electronics Single P-Channel 30 V 5.5 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8S RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel 0
Reel
  • 3,000 $0.4050
  • 6,000 $0.3950
  • 9,000 $0.3900
  • 12,000 $0.3850
$0.3850 / $0.4050 Buy Now
DISTI # SISS67DN-T1-GE3
TTI MOSFETs -30V Vds 25V Vgs PowerPAK 1212-8S RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 6000
In Stock
  • 3,000 $0.4330
  • 6,000 $0.4120
  • 9,000 $0.3930
$0.3930 / $0.4330 Buy Now
DISTI # SISS67DN-T1-GE3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -30V, -60A, Idm: -120A Min Qty: 1 0
  • 1 $1.0200
  • 5 $0.9200
  • 25 $0.8000
  • 100 $0.7300
  • 500 $0.6800
$0.6800 / $1.0200 RFQ
DISTI # SISS67DN-T1-GE3
EBV Elektronik Transistor MOSFET P-CH 30V 60A 8-Pin PowerPAK 1212 (Alt: SISS67DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SISS67DN-T1-GE3

SISS67DN-T1-GE3 CAD Models

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SISS67DN-T1-GE3 Part Data Attributes

Parametric Data
SISS67DN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SISS67DN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 60 A
Drain-source On Resistance-Max 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 460 pF
JESD-30 Code S-PDSO-N8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 65.8 W
Pulsed Drain Current-Max (IDM) 120 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 114 ns
Turn-on Time-Max (ton) 100 ns

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