Part Details for SIZ790DT-T1-GE3 by Vishay Intertechnologies
Overview of SIZ790DT-T1-GE3 by Vishay Intertechnologies
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Part Details for SIZ790DT-T1-GE3
SIZ790DT-T1-GE3 CAD Models
SIZ790DT-T1-GE3 Part Data Attributes
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SIZ790DT-T1-GE3
Vishay Intertechnologies
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Datasheet
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SIZ790DT-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 16A I(D), 30V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | 6 X 3.70 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAIR, 6 PIN | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 13 mJ | |
Case Connection | DRAIN SOURCE | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.0093 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |