Part Details for SIZF906ADT-T1-GE3 by Vishay Intertechnologies
Overview of SIZF906ADT-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Industrial Automation
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for SIZF906ADT-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIZF906ADT-T1-GE3
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Avnet Americas | DUAL N-CHANNEL 30 V (D-S) MOSFET WITH SCHOTTKY DIODE - Tape and Reel (Alt: SIZF906ADT-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 32 Weeks, 0 Days Container: Reel | 0 |
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$0.6288 / $0.7988 | Buy Now |
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DISTI #
78-SIZF906ADT-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F RoHS: Compliant | 5804 |
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$0.5690 / $1.5500 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 60 A 83 W SMT TrenchFET® Power Mosfet - PowerPAIR 6 x 5F RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks Container: Reel | 0Reel |
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$0.5700 / $0.5900 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant |
5805 Partner Stock |
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$0.5900 / $0.6900 | Buy Now |
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DISTI #
SIZF906ADT-T1-GE3
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TME | Transistor: N-MOSFET x2 + Schottky, TrenchFET®, unipolar, 30V Min Qty: 3000 | 0 |
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$0.8700 | RFQ |
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DISTI #
SIZF906ADT-T1-GE3
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EBV Elektronik | (Alt: SIZF906ADT-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 33 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIZF906ADT-T1-GE3
SIZF906ADT-T1-GE3 CAD Models
SIZF906ADT-T1-GE3 Part Data Attributes
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SIZF906ADT-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIZF906ADT-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 32 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 16 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 120 ns | |
| Turn-on Time-Max (ton) | 200 ns |