Part Details for SKIM306GD12E4 by SEMIKRON
Overview of SKIM306GD12E4 by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for SKIM306GD12E4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
77R2502
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Newark | Igbt Module, Six, 1.2Kv, 410A, Continuous Collector Current:410A, Collector Emitter Saturation Voltage:1.85V, Power Dissipation:-, Operating Temperature Max:125°C, Igbt Termination:Press Fit, Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKIM306GD12E4 RoHS: Compliant Min Qty: 16 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$525.7000 / $557.8000 | Buy Now |
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DISTI #
SKIM306GD12E4
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
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RFQ |
Part Details for SKIM306GD12E4
SKIM306GD12E4 CAD Models
SKIM306GD12E4 Part Data Attributes
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SKIM306GD12E4
SEMIKRON
Buy Now
Datasheet
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Compare Parts:
SKIM306GD12E4
SEMIKRON
Insulated Gate Bipolar Transistor, 365A I(C), 1200V V(BR)CES, N-Channel, SKIM 63, 33 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
| Package Description | FLANGE MOUNT, R-XUFM-X33 | |
| Pin Count | 33 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 365 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X33 | |
| Number of Elements | 6 | |
| Number of Terminals | 33 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 576 ns | |
| Turn-on Time-Nom (ton) | 296 ns | |
| VCEsat-Max | 2.1 V |