Part Details for SKM100GAL17E4 by SEMIKRON
Overview of SKM100GAL17E4 by SEMIKRON
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SKM100GAL17E4
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SKM100GAL17E4
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TME | Module: IGBT, diode/transistor, boost chopper, Urmax: 1.7kV, screw Min Qty: 1 | 0 |
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$57.4900 / $68.6200 | RFQ |
DISTI #
SKM100GAL17E4
|
Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 | 0 |
|
RFQ |
Part Details for SKM100GAL17E4
SKM100GAL17E4 CAD Models
SKM100GAL17E4 Part Data Attributes
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SKM100GAL17E4
SEMIKRON
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Datasheet
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SKM100GAL17E4
SEMIKRON
Insulated Gate Bipolar Transistor
|
Part Life Cycle Code | Active | |
Ihs Manufacturer | SEMIKRON INTERNATIONAL | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 164 A | |
Collector-Emitter Voltage-Max | 1700 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Gate-Emitter Thr Voltage-Max | 6.4 V | |
Gate-Emitter Voltage-Max | 20 V | |
JESD-30 Code | R-XUFM-X7 | |
Number of Elements | 1 | |
Number of Terminals | 7 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60747-1; UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 793 ns | |
Turn-on Time-Nom (ton) | 273 ns | |
VCEsat-Max | 2.2 V |