Datasheets
SKM100GAL17E4 by: SEMIKRON

Insulated Gate Bipolar Transistor

Part Details for SKM100GAL17E4 by SEMIKRON

Overview of SKM100GAL17E4 by SEMIKRON

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SKM100GAL17E4

Part # Distributor Description Stock Price Buy
DISTI # SKM100GAL17E4
TME Module: IGBT, diode/transistor, boost chopper, Urmax: 1.7kV, screw Min Qty: 1 0
  • 1 $68.6200
  • 3 $61.6000
  • 8 $57.4900
$57.4900 / $68.6200 RFQ
DISTI # SKM100GAL17E4
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 0
RFQ

Part Details for SKM100GAL17E4

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SKM100GAL17E4 Part Data Attributes

SKM100GAL17E4 SEMIKRON
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SKM100GAL17E4 SEMIKRON Insulated Gate Bipolar Transistor
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 164 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 1
Number of Terminals 7
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60747-1; UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 793 ns
Turn-on Time-Nom (ton) 273 ns
VCEsat-Max 2.2 V

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