Datasheets
SKM200GB17E4 by: SEMIKRON

Insulated Gate Bipolar Transistor

Part Details for SKM200GB17E4 by SEMIKRON

Overview of SKM200GB17E4 by SEMIKRON

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Price & Stock for SKM200GB17E4

Part # Distributor Description Stock Price Buy
DISTI # SKM200GB17E4
TME Module: IGBT, transistor/transistor, IGBT half-bridge, Ic: 200A Min Qty: 1 0
  • 1 $251.2200
  • 3 $221.8500
$221.8500 / $251.2200 RFQ
DISTI # SKM200GB17E4
Richardson RFPD POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 1 84
RFQ

Part Details for SKM200GB17E4

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SKM200GB17E4 Part Data Attributes:

SKM200GB17E4 SEMIKRON
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SKM200GB17E4 SEMIKRON Insulated Gate Bipolar Transistor
Part Life Cycle Code Active
Ihs Manufacturer SEMIKRON INTERNATIONAL
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 321 A
Collector-Emitter Voltage-Max 1700 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 6.4 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X7
Number of Elements 2
Number of Terminals 7
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 861 ns
Turn-on Time-Nom (ton) 294 ns
VCEsat-Max 2.2 V

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